2025
1.
Kwiecień, Katarzyna; Raczyński, Jan; Puchalska, Agnieszka; Nowak, Ewelina; Chłopocka, Edyta; Kot, Dawid; Szybowicz, Mirosław; Jurczyszyn, Leszek; Koczorowski, Wojciech
The effects of short-term air exposure of the monocrystal HfSe2 surface Journal Article
In: Applied Surface Science, vol. 690, pp. 162546, 2025.
@article{Kwiecien_APSUSC_2025,
title = {The effects of short-term air exposure of the monocrystal HfSe2 surface},
author = {Katarzyna Kwiecień and Jan Raczyński and Agnieszka Puchalska and Ewelina Nowak and Edyta Chłopocka and Dawid Kot and Mirosław Szybowicz and Leszek Jurczyszyn and Wojciech Koczorowski},
doi = {10.1016/j.apsusc.2025.162546},
year = {2025},
date = {2025-02-01},
urldate = {2025-02-01},
journal = {Applied Surface Science},
volume = {690},
pages = {162546},
abstract = {We report the impact of short-term sequential exposure to air–atmosphere conditions on the mechanically exfoliated surface of HfSe2 monocrystal. Our scanning electron microscopy studies show the early surface
oxidation dynamics with a rapid increase of the Se-rich blister coverage. Further X-ray photoemission and energy dispersive spectroscopy measurements reveal a progressive diffusion of O atoms into the bulk and
HfO2 layer formation on the surface during the exposure time. Finally, Raman spectroscopy measurements confirm the coexistence of HfSe2 and HfO2 on the surface. However, the Raman spectroscopy technique does
not allow quantitative determination of the degree of short-term surface oxidation. Additionally, we confirm the conclusions drawn from the experimental results with the results of the density functional theory calculations
of the O/HfSe2 adsorption system. The presented results hold substantial technological significance from the point of view of the application of HfSe2 in electronics by filling the gap in the early oxidation dynamics under ambient conditions.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420 and 0612/SBAD/6215},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
We report the impact of short-term sequential exposure to air–atmosphere conditions on the mechanically exfoliated surface of HfSe2 monocrystal. Our scanning electron microscopy studies show the early surface
oxidation dynamics with a rapid increase of the Se-rich blister coverage. Further X-ray photoemission and energy dispersive spectroscopy measurements reveal a progressive diffusion of O atoms into the bulk and
HfO2 layer formation on the surface during the exposure time. Finally, Raman spectroscopy measurements confirm the coexistence of HfSe2 and HfO2 on the surface. However, the Raman spectroscopy technique does
not allow quantitative determination of the degree of short-term surface oxidation. Additionally, we confirm the conclusions drawn from the experimental results with the results of the density functional theory calculations
of the O/HfSe2 adsorption system. The presented results hold substantial technological significance from the point of view of the application of HfSe2 in electronics by filling the gap in the early oxidation dynamics under ambient conditions.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420 and 0612/SBAD/6215
oxidation dynamics with a rapid increase of the Se-rich blister coverage. Further X-ray photoemission and energy dispersive spectroscopy measurements reveal a progressive diffusion of O atoms into the bulk and
HfO2 layer formation on the surface during the exposure time. Finally, Raman spectroscopy measurements confirm the coexistence of HfSe2 and HfO2 on the surface. However, the Raman spectroscopy technique does
not allow quantitative determination of the degree of short-term surface oxidation. Additionally, we confirm the conclusions drawn from the experimental results with the results of the density functional theory calculations
of the O/HfSe2 adsorption system. The presented results hold substantial technological significance from the point of view of the application of HfSe2 in electronics by filling the gap in the early oxidation dynamics under ambient conditions.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420 and 0612/SBAD/6215
2.
Kałuziak, Piotr; Raczyński, Jan; El-Ahmar, Semir; Koczorowski, Wojciech
Study of fabrication of InSb thin films on GaAs substrate in potential application for IoT Conference
PUT STEM 2025, Poznan, January 10, 2025.
@conference{PUT_STEM25_PK,
title = {Study of fabrication of InSb thin films on GaAs substrate in potential application for IoT},
author = {Piotr Kałuziak and Jan Raczyński and Semir El-Ahmar and Wojciech Koczorowski},
url = {https://nano.put.poznan.pl/wp-content/uploads/2025/02/PUT_STEM2025_PK.pdf},
year = {2025},
date = {2025-01-10},
urldate = {2025-01-10},
booktitle = {PUT STEM 2025},
address = {Poznan, January 10},
abstract = {Indium antimonide (InSb) has been extensively investigated for many years, renowned for its low energy gap of approximately 0.18 eV at room temperature, along with its outstanding mobility of electric charge carriers, recorded at 77000 cm²/(Vs). The advancement of device fabrication techniques creates new opportunities for thin layers of InSb. Implementing the lithography process followed by metal deposition in vacuum conditions onto the graphene layer enables the creation of complex planar structures with distinctive functionality. A minor adjustment to this structuring method makes it feasible to adapt the technology to thicker layers, such as InSb.
High-quality InSb thin films are produced using the Flash Evaporation Method (FEM) under high vacuum conditions on a gallium arsenide (GaAs) substrate. After a modified structuring approach, Hall and TLM structures were created to assess the galvanometric properties of the InSb-based hybrid structures. Furthermore, a structure was proposed to evaluate the effectiveness of the strip magneto sensor (SMS) in the InSb material. Due to the high mobility of the charge carriers in InSb, it is expected that a notable magnetoresistive effect will be observed in specific geometric configurations, which enhances the potential for developing a magnetoresistive sensor that could be an integral component of the Internet of Things (IoT).
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420 and 0512/SBAD/6217
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
Indium antimonide (InSb) has been extensively investigated for many years, renowned for its low energy gap of approximately 0.18 eV at room temperature, along with its outstanding mobility of electric charge carriers, recorded at 77000 cm²/(Vs). The advancement of device fabrication techniques creates new opportunities for thin layers of InSb. Implementing the lithography process followed by metal deposition in vacuum conditions onto the graphene layer enables the creation of complex planar structures with distinctive functionality. A minor adjustment to this structuring method makes it feasible to adapt the technology to thicker layers, such as InSb.
High-quality InSb thin films are produced using the Flash Evaporation Method (FEM) under high vacuum conditions on a gallium arsenide (GaAs) substrate. After a modified structuring approach, Hall and TLM structures were created to assess the galvanometric properties of the InSb-based hybrid structures. Furthermore, a structure was proposed to evaluate the effectiveness of the strip magneto sensor (SMS) in the InSb material. Due to the high mobility of the charge carriers in InSb, it is expected that a notable magnetoresistive effect will be observed in specific geometric configurations, which enhances the potential for developing a magnetoresistive sensor that could be an integral component of the Internet of Things (IoT).
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420 and 0512/SBAD/6217
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
High-quality InSb thin films are produced using the Flash Evaporation Method (FEM) under high vacuum conditions on a gallium arsenide (GaAs) substrate. After a modified structuring approach, Hall and TLM structures were created to assess the galvanometric properties of the InSb-based hybrid structures. Furthermore, a structure was proposed to evaluate the effectiveness of the strip magneto sensor (SMS) in the InSb material. Due to the high mobility of the charge carriers in InSb, it is expected that a notable magnetoresistive effect will be observed in specific geometric configurations, which enhances the potential for developing a magnetoresistive sensor that could be an integral component of the Internet of Things (IoT).
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420 and 0512/SBAD/6217
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
3.
El-Ahmar, Semir; Jagiełło, Jakub; Szary, Maciej J.; Reddig, Wiktoria; Dobrowolski, Artur; Prokopowicz, Rafał; Ziemba, Maciej; Ciuk, Tymoteusz
Fluence and thermal threshold for an effective self-healing in high-energy-neutron-irradiated Al2O3/QFS-graphene/6H-SiC(0001) system Journal Article
In: Applied Surface Science, vol. 685, pp. 161953, 2025.
@article{El-Ahmar_APSUSC_2025,
title = {Fluence and thermal threshold for an effective self-healing in high-energy-neutron-irradiated Al2O3/QFS-graphene/6H-SiC(0001) system},
author = {Semir El-Ahmar and Jakub Jagiełło and Maciej J. Szary and Wiktoria Reddig and Artur Dobrowolski and Rafał Prokopowicz and Maciej Ziemba and Tymoteusz Ciuk},
doi = {10.1016/j.apsusc.2024.161953},
year = {2025},
date = {2025-01-01},
urldate = {2025-01-01},
journal = {Applied Surface Science},
volume = {685},
pages = {161953},
abstract = {This article reveals a unique self-healing ability of the amorphous-aluminum-oxide-passivated p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semi-insulating vanadium-compensated nominally on-axis 6H-SiC(0001) system, exposed for 166 h to a destructive flux of 3.3E11 cm−2 s−1 of mostly fast-neutrons (1–2 MeV), resulting in an accumulated fluence of 2E17 cm−2. Post-irradiation room-temperature Hall effect characterization proves that the a-Al2O3/QFS-graphene/6H-SiC(0001) is n-type, which implies the loss of the quasi-free-standing character of graphene and likely damage to the SiC(0001)-saturating hydrogen layer. Micro-Raman spectroscopy suggests an average defect density in graphene of 3.1E10 cm−2 with an 32-nm inter-defect distance. Yet, a thermal treatment up to 623 K eliminates defect-related Raman peaks and restores the original p-type conductance. At the same time, 623 K is not enough to recover the initial transport properties in a sample irradiated for 245 h with a total fluence of 2.0E18 cm−2. A Density Functional Theory model explains the self-healing phenomenon and restoration of the quasi-free-standing properties through thermally-activated lateral diffusion of the remaining population of hydrogen atoms and re-decoupling of the graphene sheet from the SiC(0001) surface. The thermal regime of 623 K fits perfectly into the operational limits of the a-Al2O3/QFS-graphene/6H-SiC(0001) system, defined as 300 K to 770 K. The finding constitutes a milestone for two-dimensional, graphene-based diagnostic and control systems designed for operation in extreme environments.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
This article reveals a unique self-healing ability of the amorphous-aluminum-oxide-passivated p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semi-insulating vanadium-compensated nominally on-axis 6H-SiC(0001) system, exposed for 166 h to a destructive flux of 3.3E11 cm−2 s−1 of mostly fast-neutrons (1–2 MeV), resulting in an accumulated fluence of 2E17 cm−2. Post-irradiation room-temperature Hall effect characterization proves that the a-Al2O3/QFS-graphene/6H-SiC(0001) is n-type, which implies the loss of the quasi-free-standing character of graphene and likely damage to the SiC(0001)-saturating hydrogen layer. Micro-Raman spectroscopy suggests an average defect density in graphene of 3.1E10 cm−2 with an 32-nm inter-defect distance. Yet, a thermal treatment up to 623 K eliminates defect-related Raman peaks and restores the original p-type conductance. At the same time, 623 K is not enough to recover the initial transport properties in a sample irradiated for 245 h with a total fluence of 2.0E18 cm−2. A Density Functional Theory model explains the self-healing phenomenon and restoration of the quasi-free-standing properties through thermally-activated lateral diffusion of the remaining population of hydrogen atoms and re-decoupling of the graphene sheet from the SiC(0001) surface. The thermal regime of 623 K fits perfectly into the operational limits of the a-Al2O3/QFS-graphene/6H-SiC(0001) system, defined as 300 K to 770 K. The finding constitutes a milestone for two-dimensional, graphene-based diagnostic and control systems designed for operation in extreme environments.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
2024
4.
El-Ahmar, Semir; Jankowski, Jakub; Czaja, Paweł; Przychodnia, Marta; Reddig, Wiktoria; Kałuziak, Piotr; Raczyński, Jan
Czujnik pola magnetycznego do pracy w zakresie temperatur od -196 st.C do 350 st.C Patent
2024, (Patent application P.450839).
@patent{P.450839_SA,
title = {Czujnik pola magnetycznego do pracy w zakresie temperatur od -196 st.C do 350 st.C},
author = {Semir El-Ahmar and Jakub Jankowski and Paweł Czaja and Marta Przychodnia and Wiktoria Reddig and Piotr Kałuziak and Jan Raczyński},
year = {2024},
date = {2024-12-24},
urldate = {2024-12-24},
note = {Patent application P.450839},
keywords = {},
pubstate = {published},
tppubtype = {patent}
}
5.
Skrzypek, Magdalena; Wojciechowski, Łukasz; Kałużny, Jarosław; Boncel, Sławomir; Marek, Adam A.; Runka, Tomasz; Nowicki, Marek; Jędrysiak, Rafał; Ruczka, Szymon; Błaszkiewicz, Paulina
Carbon Nanotubes Decorated with Nickel or Copper as Anti-Wear and Extreme-Pressure Additives for Greases Journal Article
In: Lubricants, vol. 12, pp. 448, 2024.
@article{Lubricants2024,
title = {Carbon Nanotubes Decorated with Nickel or Copper as Anti-Wear and Extreme-Pressure Additives for Greases},
author = {Magdalena Skrzypek and Łukasz Wojciechowski and Jarosław Kałużny and Sławomir Boncel and Adam A. Marek and Tomasz Runka and Marek Nowicki and Rafał Jędrysiak and Szymon Ruczka and Paulina Błaszkiewicz},
doi = {10.3390/lubricants12120448},
year = {2024},
date = {2024-12-16},
journal = {Lubricants},
volume = {12},
pages = {448},
abstract = {To increase the anti-wear (AW) and anti-scuffing possibilities of commercially available lithium grease, this paper proposed enriching the original composition with functionalised carbon nanotubes (CNTs) at a concentration of 0.1% (w/w). The CNTs were modified by decorating them with nanoparticles of two metals with established tribological potential: copper and nickel. The AW and extreme-pressure properties were determined using the customised ISO-20623 test on a four-ball apparatus. The AW properties were determined using the standardised parameter MWSD (mean wear scar diameter) and the anti-scuffing properties using the last non-seizing load. The greases enriched with nanoadditives showed better AWproperties compared to the reference grease at higher loads (1–1.2 kN). Particularly favourable results were observed for grease with the addition of Cudecorated CNTs, for which the MWSD values were more than 50% lower than the reference. Optical microscopy, SEM and TEM microscopy with EDS analysis, and Raman spectroscopy were used to identify the wear mechanisms and characterise the role of nanoadditives in the lubrication process.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
To increase the anti-wear (AW) and anti-scuffing possibilities of commercially available lithium grease, this paper proposed enriching the original composition with functionalised carbon nanotubes (CNTs) at a concentration of 0.1% (w/w). The CNTs were modified by decorating them with nanoparticles of two metals with established tribological potential: copper and nickel. The AW and extreme-pressure properties were determined using the customised ISO-20623 test on a four-ball apparatus. The AW properties were determined using the standardised parameter MWSD (mean wear scar diameter) and the anti-scuffing properties using the last non-seizing load. The greases enriched with nanoadditives showed better AWproperties compared to the reference grease at higher loads (1–1.2 kN). Particularly favourable results were observed for grease with the addition of Cudecorated CNTs, for which the MWSD values were more than 50% lower than the reference. Optical microscopy, SEM and TEM microscopy with EDS analysis, and Raman spectroscopy were used to identify the wear mechanisms and characterise the role of nanoadditives in the lubrication process.
6.
Kałuziak, Piotr; Raczyński, Jan; El-Ahmar, Semir; Koczorowski, Wojciech
Study of InSb Thin Films obtained by imperfect method for nearly perfect applications Conference
Technolutions 2024, Warsaw, November 26-27, 2024, (Poster presentation).
@conference{Technol2024_PK,
title = {Study of InSb Thin Films obtained by imperfect method for nearly perfect applications},
author = {Piotr Kałuziak and Jan Raczyński and Semir El-Ahmar and Wojciech Koczorowski},
url = {https://nano.put.poznan.pl/wp-content/uploads/2024/12/Technolutions2024_PK.pdf},
year = {2024},
date = {2024-11-26},
booktitle = {Technolutions 2024},
address = {Warsaw, November 26-27},
abstract = {Indium antimonide InSb is a III V group crystalline semiconductor with a room temperature energy gap of 0,18 eV a high electron mobility of 78 000 cm²/Vs hole mobility of 850 cm²/Vs which is crucial for efficient electronic devices This increased mobility leads to faster response times in infrared ( photodetectors, improving sensitivity and operational speed. InSb thin films can be grown on gallium arsenide substrates using Molecular Beam Epitaxy (MBE). MBE enhances film quality through precise deposition control, including environmental regulation, atomic layer deposition, flux monitoring, temperature control and the use of intermediate layers. Lately the MBE method was improved, which his resulted in more homogeneous InSb films In these studies, it was decided to use the less perfect Flash Evaporation Method (FEM). FEM does not fabricate layers of such good quality as MBE, but it is a cheaper and less demanding method, and what is more, the resulting layer imperfections may have potential applications in cybersecurity as physical unclonable functions(PUF). The studies presented here lead to the determination of the measurability and usability of fabrication defects in future plans to use them as cybersecurity elements.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420 and 0512/SBAD/6217
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020},
note = {Poster presentation},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
Indium antimonide InSb is a III V group crystalline semiconductor with a room temperature energy gap of 0,18 eV a high electron mobility of 78 000 cm²/Vs hole mobility of 850 cm²/Vs which is crucial for efficient electronic devices This increased mobility leads to faster response times in infrared ( photodetectors, improving sensitivity and operational speed. InSb thin films can be grown on gallium arsenide substrates using Molecular Beam Epitaxy (MBE). MBE enhances film quality through precise deposition control, including environmental regulation, atomic layer deposition, flux monitoring, temperature control and the use of intermediate layers. Lately the MBE method was improved, which his resulted in more homogeneous InSb films In these studies, it was decided to use the less perfect Flash Evaporation Method (FEM). FEM does not fabricate layers of such good quality as MBE, but it is a cheaper and less demanding method, and what is more, the resulting layer imperfections may have potential applications in cybersecurity as physical unclonable functions(PUF). The studies presented here lead to the determination of the measurability and usability of fabrication defects in future plans to use them as cybersecurity elements.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420 and 0512/SBAD/6217
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420 and 0512/SBAD/6217
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
7.
Ciuk, Tymoteusz; Nouvellon, Corinne; Monteverde, Fabien; Stańczyk, Beata; Przyborowska, Krystyna; Czołak, Dariusz; El-Ahmar, Semir
High-temperature Thermal Stability of a Graphene Hall Effect Sensor on Defect-engineered 4H-SiC(0001) Journal Article
In: IEEE Electron Device Letters, vol. 45, no. 10, pp. 1957-1960, 2024.
@article{EDL2024,
title = {High-temperature Thermal Stability of a Graphene Hall Effect Sensor on Defect-engineered 4H-SiC(0001)},
author = {Tymoteusz Ciuk and Corinne Nouvellon and Fabien Monteverde and Beata Stańczyk and Krystyna Przyborowska and Dariusz Czołak and Semir El-Ahmar},
doi = {10.1109/LED.2024.3436050},
year = {2024},
date = {2024-09-30},
urldate = {2024-09-30},
journal = {IEEE Electron Device Letters},
volume = {45},
number = {10},
pages = {1957-1960},
abstract = {In this letter, we demonstrate a Hall effect sensor in the technology of amorphous-Al 2 O 3 -passivated transfer-free p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semi-insulating high-purity on-axis 4H-SiC(0001), pre-epitaxially modified with 5-keV hydrogen (H + ) ions. The sensor operates between 305 K and 770 K, with a current-mode sensitivity of ~75 V/AT and thermal stability below 0.15 %/K (⩽ 0.03 %/K in a narrower range between 305 K and 700 K). It is a promising two-dimensional platform for high-temperature magnetic diagnostics and plasma control systems for modern tokamak fusion reactors.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
In this letter, we demonstrate a Hall effect sensor in the technology of amorphous-Al 2 O 3 -passivated transfer-free p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semi-insulating high-purity on-axis 4H-SiC(0001), pre-epitaxially modified with 5-keV hydrogen (H + ) ions. The sensor operates between 305 K and 770 K, with a current-mode sensitivity of ~75 V/AT and thermal stability below 0.15 %/K (⩽ 0.03 %/K in a narrower range between 305 K and 700 K). It is a promising two-dimensional platform for high-temperature magnetic diagnostics and plasma control systems for modern tokamak fusion reactors.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
8.
Kwiecień, Katarzyna; Raczyński, Jan; Puchalska, Agnieszka; Nowak, Ewelina; Chłopocka, Edyta; Kot, Damian; Szybowicz, Mirosław; Jurczyszyn, Leszek; Koczorowski, Wojciech
The effects of short-term air exposure of monocrystal HfSe2 surface Conference
IWSP, Niemcza, September 22-26, 2024, (Oral presentation).
@conference{IWSP2024_KK,
title = {The effects of short-term air exposure of monocrystal HfSe2 surface},
author = {Katarzyna Kwiecień and Jan Raczyński and Agnieszka Puchalska and Ewelina Nowak and Edyta Chłopocka and Damian Kot and Mirosław Szybowicz and Leszek Jurczyszyn and Wojciech Koczorowski},
url = {https://nano.put.poznan.pl/wp-content/uploads/2024/09/IWSP2024_KK.pdf},
year = {2024},
date = {2024-09-23},
booktitle = {IWSP},
address = {Niemcza, September 22-26},
abstract = {One of the ways to improve silicon-based electronics is the integration of silicon with a material that possesses properties such as a sizable band gap (Eg) in the range of 1 - 2 eV and high room temperature carrier mobility (RTCM). HfSe2, which belongs to transition metal dichalcogenides (TMDs) group, is a material that meets these requirements. Predicted RTCM of HfSe2 is the highest among TMDs (3500 cm2 V-1 s-1). Its bulk Eg is 1.1 eV and depends on the number of its layers and on the presence of HfO2 in its subsurface, which widens the Eg up to 2 eV. Due to the sensitivity of HfSe2 to oxidation and its technological importance in possible future applications, we investigated this process for exfoliated bulk HfSe2 crystal under ambient conditions. Our scanning electron microscopy studies show early oxidation with a rapid increase in the Se-rich blister coverage. X-ray photoemission data reveals diffusion of O atoms into the bulk and HfO2 formation. Raman spectroscopy results confirm the coexistence of HfSe2 and HfO2 on the surface. Additionally, we confront the experimental findings with the density functional theory predictions.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420 and 0612/SBAD/6215},
note = {Oral presentation},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
One of the ways to improve silicon-based electronics is the integration of silicon with a material that possesses properties such as a sizable band gap (Eg) in the range of 1 - 2 eV and high room temperature carrier mobility (RTCM). HfSe2, which belongs to transition metal dichalcogenides (TMDs) group, is a material that meets these requirements. Predicted RTCM of HfSe2 is the highest among TMDs (3500 cm2 V-1 s-1). Its bulk Eg is 1.1 eV and depends on the number of its layers and on the presence of HfO2 in its subsurface, which widens the Eg up to 2 eV. Due to the sensitivity of HfSe2 to oxidation and its technological importance in possible future applications, we investigated this process for exfoliated bulk HfSe2 crystal under ambient conditions. Our scanning electron microscopy studies show early oxidation with a rapid increase in the Se-rich blister coverage. X-ray photoemission data reveals diffusion of O atoms into the bulk and HfO2 formation. Raman spectroscopy results confirm the coexistence of HfSe2 and HfO2 on the surface. Additionally, we confront the experimental findings with the density functional theory predictions.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420 and 0612/SBAD/6215
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420 and 0612/SBAD/6215
9.
Raczyński, Jan; Koczorowski, Wojciech
Comparison of different metal/PtSe2 systems Conference
IWSP, Niemcza, September 22-26, 2024, (Oral presentation).
@conference{IWSP2024_JR,
title = {Comparison of different metal/PtSe2 systems},
author = {Jan Raczyński and Wojciech Koczorowski},
url = {https://nano.put.poznan.pl/wp-content/uploads/2024/09/IWSP2024_JR.pdf},
year = {2024},
date = {2024-09-23},
urldate = {2024-09-23},
booktitle = {IWSP},
address = {Niemcza, September 22-26},
abstract = {Today, 2D materials also include Transition Metal Dichalcogenides (TMD), which provide a wide range of charge carrier mobility values and bandgap energy, which depend on the thickness. One of the most promising TMD materials for further applications is PtSe2, which exhibits a chemically nonreactive surface, it is crucial to determine the properties of the metal/PtSe2 interfaces. Different metals form morphologically unique structures on the PtSe2 surface, which requires a comprehensive analysis of physicochemical properties including an analysis of the thermal stability of such systems. This presentation will discuss the properties of the metallic layers (eg. Ni, Ti) with various thicknesses embedded on the surface of the bulk PtSe2 crystal. Particular emphasis will be placed on forming intermixed phases at the interface observed in the form of vibration modes in Raman spectroscopy and the chemical shift in XPS measurements. The observed differences between the metal layer and PtSe2 indicate the distinctive properties of such structures, which translate into the operation of planar architecture sensor devices.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Science Centre (Poland), Project No. 2019/35/O/ST5/01940, NAWA grant No.PPN/STA/2021/1/00043},
note = {Oral presentation},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
Today, 2D materials also include Transition Metal Dichalcogenides (TMD), which provide a wide range of charge carrier mobility values and bandgap energy, which depend on the thickness. One of the most promising TMD materials for further applications is PtSe2, which exhibits a chemically nonreactive surface, it is crucial to determine the properties of the metal/PtSe2 interfaces. Different metals form morphologically unique structures on the PtSe2 surface, which requires a comprehensive analysis of physicochemical properties including an analysis of the thermal stability of such systems. This presentation will discuss the properties of the metallic layers (eg. Ni, Ti) with various thicknesses embedded on the surface of the bulk PtSe2 crystal. Particular emphasis will be placed on forming intermixed phases at the interface observed in the form of vibration modes in Raman spectroscopy and the chemical shift in XPS measurements. The observed differences between the metal layer and PtSe2 indicate the distinctive properties of such structures, which translate into the operation of planar architecture sensor devices.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Science Centre (Poland), Project No. 2019/35/O/ST5/01940, NAWA grant No.PPN/STA/2021/1/00043
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Science Centre (Poland), Project No. 2019/35/O/ST5/01940, NAWA grant No.PPN/STA/2021/1/00043
10.
Koczorowski, Wojciech; Raczyński, Jan
Comparative investigation of PtSe2-based systems from 1L to bulk Conference
IWSP, Niemcza, September 22-26, 2024, (Oral presentation).
@conference{IWSP2024_WK,
title = {Comparative investigation of PtSe2-based systems from 1L to bulk},
author = {Wojciech Koczorowski and Jan Raczyński},
url = {https://nano.put.poznan.pl/wp-content/uploads/2024/09/IWSP2024_WK.pdf},
year = {2024},
date = {2024-09-23},
booktitle = {IWSP},
address = {Niemcza, September 22-26},
abstract = {The Transition Metal Dichalcogenides (TMD) class of materials attracts the interest of researchers and technologists because of their intrinsic physical properties, such as the thickness dependence of electronic properties that switch from semiconducting to metallic in the same material and the possibility of bandgap engineering. PtSe2 is a promising material with potential for future applications due to the chemical stability of the surface and the predicted high charge carrier mobility. In the presentation experimental studies of 1, 2, 3, 5, and 10 L of PtSe2 deposited on an Al2O3 substrate will be shown, including a comparison with the bulk properties. The discussion will focus on the properties of commercially available samples and the impact of temperature on the considered systems (in the range of RT to 520K). Finally, the fabrication of elaborate procedures for the PtSe2-based simple electronic devices will be discussed.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the National Science Centre (Poland), Project No. 2019/35/O/ST5/01940},
note = {Oral presentation},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
The Transition Metal Dichalcogenides (TMD) class of materials attracts the interest of researchers and technologists because of their intrinsic physical properties, such as the thickness dependence of electronic properties that switch from semiconducting to metallic in the same material and the possibility of bandgap engineering. PtSe2 is a promising material with potential for future applications due to the chemical stability of the surface and the predicted high charge carrier mobility. In the presentation experimental studies of 1, 2, 3, 5, and 10 L of PtSe2 deposited on an Al2O3 substrate will be shown, including a comparison with the bulk properties. The discussion will focus on the properties of commercially available samples and the impact of temperature on the considered systems (in the range of RT to 520K). Finally, the fabrication of elaborate procedures for the PtSe2-based simple electronic devices will be discussed.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the National Science Centre (Poland), Project No. 2019/35/O/ST5/01940
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the National Science Centre (Poland), Project No. 2019/35/O/ST5/01940
11.
Koczorowski, Wojciech; Raczyński, Jan; Kwiecień, Katarzyna; Czajka, Ryszard
Charakteryzacja wybranych materiałów TMD zawierających Se Conference
XIII Konferencja Techniki Próżni, Warsaw, September 19-20, 2024, (Invited lecture).
@conference{PTP2024_WK,
title = {Charakteryzacja wybranych materiałów TMD zawierających Se},
author = {Wojciech Koczorowski and Jan Raczyński and Katarzyna Kwiecień and Ryszard Czajka},
url = {https://nano.put.poznan.pl/wp-content/uploads/2024/09/XIIIKTP-WK.pdf},
year = {2024},
date = {2024-09-20},
urldate = {2024-09-20},
booktitle = {XIII Konferencja Techniki Próżni},
address = {Warsaw, September 19-20},
abstract = {Dichalkogenki metali przejściowych (TMD) to grupa materiałów dwuwymiarowych, które posiadają ciekawe właściwości fizyczne. Wykazują one silną zależność właściwości elektronowych w funkcji ilości ultra-cienkich warstw (od jednej do kilku ML). Pozwala to uzyskać zarówno charakterystykę półprzewodnikową jak i metaliczną dla tego samego materiału. Powoduje to, że materiały TMD podlegają intensywnym badaniom naukowym. W ramach prezentacji pokazane zostaną wyniki prac eksperymentalnych dotyczących PtSe2 oraz HfSe2, które cechują się dużą wartością ruchliwości nośników ładunków elektrycznych. Istotną cechą różnicującą te materiały jest ich aktywność chemiczna, która jest znacznie większa w przypadku HfSe2. W przypadku PtSe2 główny nacisk postawiony zostanie na analizie widm spektroskopii Ramana (RS) umożliwiającej jednoznaczne określenie ilości ML w układzie. Dla powierzchni kryształu HfSe2 omówione zostaną komplementarne wyniki uzyskane za pomocą technik: skaningowej mikroskopii elektronowej (SEM), rentgenowskiej spektrometrii fotoelektronów (XPS) i RS prezentujące zmiany morfologii warstw przypowierzchniowych, które są efektem ekspozycji na warunki zewnętrzne oraz umożliwiają zrozumienie dynamiki procesu utleniania powierzchni. W końcowej części zaprezentowana zostanie także metoda strukturyzacji prostych urządzeń elektronowych z wykorzystaniem: litografii optycznej, strukturyzowania plazmą argonową oraz osadzania warstw metalicznych z wykorzystaniem osadzania magnetronowego.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the National Science Center (Poland), Project No. 2019/35/O/ST5/01940},
note = {Invited lecture},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
Dichalkogenki metali przejściowych (TMD) to grupa materiałów dwuwymiarowych, które posiadają ciekawe właściwości fizyczne. Wykazują one silną zależność właściwości elektronowych w funkcji ilości ultra-cienkich warstw (od jednej do kilku ML). Pozwala to uzyskać zarówno charakterystykę półprzewodnikową jak i metaliczną dla tego samego materiału. Powoduje to, że materiały TMD podlegają intensywnym badaniom naukowym. W ramach prezentacji pokazane zostaną wyniki prac eksperymentalnych dotyczących PtSe2 oraz HfSe2, które cechują się dużą wartością ruchliwości nośników ładunków elektrycznych. Istotną cechą różnicującą te materiały jest ich aktywność chemiczna, która jest znacznie większa w przypadku HfSe2. W przypadku PtSe2 główny nacisk postawiony zostanie na analizie widm spektroskopii Ramana (RS) umożliwiającej jednoznaczne określenie ilości ML w układzie. Dla powierzchni kryształu HfSe2 omówione zostaną komplementarne wyniki uzyskane za pomocą technik: skaningowej mikroskopii elektronowej (SEM), rentgenowskiej spektrometrii fotoelektronów (XPS) i RS prezentujące zmiany morfologii warstw przypowierzchniowych, które są efektem ekspozycji na warunki zewnętrzne oraz umożliwiają zrozumienie dynamiki procesu utleniania powierzchni. W końcowej części zaprezentowana zostanie także metoda strukturyzacji prostych urządzeń elektronowych z wykorzystaniem: litografii optycznej, strukturyzowania plazmą argonową oraz osadzania warstw metalicznych z wykorzystaniem osadzania magnetronowego.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the National Science Center (Poland), Project No. 2019/35/O/ST5/01940
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the National Science Center (Poland), Project No. 2019/35/O/ST5/01940
12.
El-Ahmar, Semir; Reddig, Wiktoria; Jagiełło, Jakub; Szary, Maciej J.; Dobrowolski, Artur; Prokopowicz, Rafał; Ziemba, Maciej; Wzorek, Marek; Ciuk, Tymoteusz
Graphene & 2D Mat. 9, Poznan, September 8-10, 2024, (Invited lecture).
@conference{GR2DMAT9_SA,
title = {Exploring the limits of graphene's operation in extreme conditions imposed by the future energy industry},
author = {Semir El-Ahmar and Wiktoria Reddig and Jakub Jagiełło and Maciej J. Szary and Artur Dobrowolski and Rafał Prokopowicz and Maciej Ziemba and Marek Wzorek and Tymoteusz Ciuk},
url = {https://nano.put.poznan.pl/wp-content/uploads/2024/09/GR2DMat9_SA.pdf},
year = {2024},
date = {2024-09-10},
booktitle = {Graphene & 2D Mat. 9},
address = {Poznan, September 8-10},
abstract = {Our research explores the potential of using two-dimensional (2D) carbon structures as magnetic field detectors capable of operating in the extreme conditions of future thermonuclear power plants. In so-called magnetic-confinement fusion reactors, electronics will be exposed to high temperatures and radiation damage. We demonstrate the experimental study on the impact of neutron radiation and determine its influence on the electrical parameters of epitaxial graphene-based systems. We have conducted preliminary research to investigate the impact of high temperature and neutron irradiation separately. For this purpose, we fabricated a hydrogen-intercalated quasi-free-standing (QFS) graphene on semi-insulating 4H-SiC(0001) and 6H-SiC(0001), passivated with an Al2O3 layer [3,4]. The systems were exposed to highenergy neutron fluxes using the MARIA research nuclear reactor. We theorize that the main factor affecting the QFS properties of graphene in tested systems is the depletion of atoms in the hydrogen layer, based on Hall effect measurements and micro-Raman characterization supported by high-resolution transmission electron microscopy. We have predicted, using density functional theory calculations, that damage to the intercalation lowers carrier concentration in graphene. We anticipate that temperatures above 200°C will facilitate the diffusion of the hydrogen atoms from parts with higher to lower concentrations. This effect can reduce the surface area where intercalation is too low to support the separation of the graphene and improve its QFS properties.
Understanding the mechanism of damaging the tested systems by neutron radiation is a key milestone in assessing its suitability for magnetic field detection in harsh environments.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420},
note = {Invited lecture},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
Our research explores the potential of using two-dimensional (2D) carbon structures as magnetic field detectors capable of operating in the extreme conditions of future thermonuclear power plants. In so-called magnetic-confinement fusion reactors, electronics will be exposed to high temperatures and radiation damage. We demonstrate the experimental study on the impact of neutron radiation and determine its influence on the electrical parameters of epitaxial graphene-based systems. We have conducted preliminary research to investigate the impact of high temperature and neutron irradiation separately. For this purpose, we fabricated a hydrogen-intercalated quasi-free-standing (QFS) graphene on semi-insulating 4H-SiC(0001) and 6H-SiC(0001), passivated with an Al2O3 layer [3,4]. The systems were exposed to highenergy neutron fluxes using the MARIA research nuclear reactor. We theorize that the main factor affecting the QFS properties of graphene in tested systems is the depletion of atoms in the hydrogen layer, based on Hall effect measurements and micro-Raman characterization supported by high-resolution transmission electron microscopy. We have predicted, using density functional theory calculations, that damage to the intercalation lowers carrier concentration in graphene. We anticipate that temperatures above 200°C will facilitate the diffusion of the hydrogen atoms from parts with higher to lower concentrations. This effect can reduce the surface area where intercalation is too low to support the separation of the graphene and improve its QFS properties.
Understanding the mechanism of damaging the tested systems by neutron radiation is a key milestone in assessing its suitability for magnetic field detection in harsh environments.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Understanding the mechanism of damaging the tested systems by neutron radiation is a key milestone in assessing its suitability for magnetic field detection in harsh environments.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
13.
El-Ahmar, Semir; Jankowski, Jakub; Czaja, Paweł; Reddig, Wiktoria; Przychodnia, Marta; Raczyński, Jan; Koczorowski, Wojciech
Hall-effect sensors for extreme temperature applications Conference
XXXVI EUROSENSORS conference, Debrecen, September 1-4, 2024, (Oral presentation).
@conference{EUROSENSORS_2024_SA,
title = {Hall-effect sensors for extreme temperature applications},
author = {Semir El-Ahmar and Jakub Jankowski and Paweł Czaja and Wiktoria Reddig and Marta Przychodnia and Jan Raczyński and Wojciech Koczorowski},
url = {https://nano.put.poznan.pl/wp-content/uploads/2024/09/EuroSensors2024_SA.pdf},
year = {2024},
date = {2024-09-02},
booktitle = {XXXVI EUROSENSORS conference},
address = {Debrecen, September 1-4},
abstract = {This work is focused on developing magnetic field sensors that rely on the Hall effect and can operate stably in extreme temperatures. We have achieved this by creating a Hall effect structure using indium antimonide and a housing that can withstand an extremely wide range of operating temperatures. Our device has been tested and proven to operate stably at high temperatures up to 350°C, as well as in the cryogenic range using liquid helium. This is a significant milestone as no other magnetic field sensor has been able to perform in such extreme temperature conditions.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020},
note = {Oral presentation},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
This work is focused on developing magnetic field sensors that rely on the Hall effect and can operate stably in extreme temperatures. We have achieved this by creating a Hall effect structure using indium antimonide and a housing that can withstand an extremely wide range of operating temperatures. Our device has been tested and proven to operate stably at high temperatures up to 350°C, as well as in the cryogenic range using liquid helium. This is a significant milestone as no other magnetic field sensor has been able to perform in such extreme temperature conditions.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
14.
Reddig, Wiktoria; El-Ahmar, Semir; Prokopowicz, Rafał; Ciuk, Tymoteusz
Neutron Radiation Effects on Thin-Film and Two-Dimensional Magnetic Field Sensors Conference
XXXVI EUROSENSORS conference, Debrecen, September 1-4, 2024, (Oral presentation).
@conference{EUROSENSORS_2024_WR,
title = {Neutron Radiation Effects on Thin-Film and Two-Dimensional Magnetic Field Sensors},
author = {Wiktoria Reddig and Semir El-Ahmar and Rafał Prokopowicz and Tymoteusz Ciuk},
url = {https://nano.put.poznan.pl/wp-content/uploads/2024/09/EuroSensors2024_WR.pdf},
year = {2024},
date = {2024-09-02},
booktitle = {XXXVI EUROSENSORS conference},
address = {Debrecen, September 1-4},
abstract = {Reporting research findings on two types of magnetic field sensors for use in harsh environments and the impact of high-energy neutron flux on them. Researched sensors being 2-D epitaxially grown quasi- free-standing graphene on SiC and thin film InSb on GaAs. The research constitutes a continuation of the series of studies assessing the radiation resistance of graphene-based sensor platforms compared to classical thin-film magnetic diagnostic systems.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020},
note = {Oral presentation},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
Reporting research findings on two types of magnetic field sensors for use in harsh environments and the impact of high-energy neutron flux on them. Researched sensors being 2-D epitaxially grown quasi- free-standing graphene on SiC and thin film InSb on GaAs. The research constitutes a continuation of the series of studies assessing the radiation resistance of graphene-based sensor platforms compared to classical thin-film magnetic diagnostic systems.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
15.
Zhezhera, Taras; Głuchowski, Paweł; Nowicki, Marek; Chrunik, Maciej; Szczęśniak, Barbara; Kasprowicz, Dobrosława
Enhancement of Yb3+ Emission in Bi3TeBO9 through Efficient Energy Transfer from Bi3+ Ions Journal Article
In: The Journal of Physical Chemistry C, vol. 128, iss. 34, pp. 14357, 2024.
@article{JphysChemC2024,
title = {Enhancement of Yb3+ Emission in Bi3TeBO9 through Efficient Energy Transfer from Bi3+ Ions},
author = {Taras Zhezhera and Paweł Głuchowski and Marek Nowicki and Maciej Chrunik and Barbara Szczęśniak and Dobrosława Kasprowicz},
doi = {10.1021/acs.jpcc.4c04134},
year = {2024},
date = {2024-08-15},
journal = {The Journal of Physical Chemistry C},
volume = {128},
issue = {34},
pages = {14357},
abstract = {An efficient near-infrared emission of Yb3+ ions sensitized by Bi3+ ions was revealed in Bi3TeBO9:Yb3+ microcrystalline powders. Bi3TeBO9:Yb3+ doped with different concentrations of Yb3+ ions (0.5, 1.0, 2.5, 4.0, and 7.5 at %) were synthesized by means of the modified Pechini method. The structure, morphology, and elemental composition of samples were investigated using X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy techniques. The μ-Raman spectroscopic measurements of Bi3TeBO9:Yb3+ allowed us to determine the energy vibrations of characteristic molecular groups BO3 and TeO6 present in the Bi3TeBO9 matrix. Emissions of Bi3TeBO9:Yb3+ powders were measured upon excitation at 330 nm by Bi3+ ions (the 1S0 → 3P1 transition) in VIS (Bi3+ ions emission assigned to the 3P0 → 1S0 transition) and NIR (Yb3+ ions emission assigned to the 2F5/2 → 2F7/2) spectral ranges. In particular, the strongest emission band of Yb3+ ions at 975 nm was observed in the spectrum of Bi3TeBO9:Yb3+ doped with 4.0 at % of Yb3+ ions. This suggests that Bi3+ ions present in the Bi3TeBO9 matrix can be used as a UV absorption sensitizer for Yb3+ ions in the considered systems. Moreover, the decay times of 3P0 → 1S0 transitions of Bi3+ ions (emission in VIS with maximum at 550 nm) and 2F5/2 → 2F7/2 transitions of Yb3+ ions (emission in NIR at 975 nm) upon excitation at 330 nm were measured. The calculated energy transfer efficiency and quantum efficiency coefficients confirmed the effective energy transfer from Bi3+ to Yb3+ ions in the Bi3TeBO9:Yb3+ system. The obtained results show that Bi3TeBO9:Yb3+ powders, as efficient UV to NIR spectral converters, can be potentially used in c-Si solar cell technology, enhancing the photovoltaic effect.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
An efficient near-infrared emission of Yb3+ ions sensitized by Bi3+ ions was revealed in Bi3TeBO9:Yb3+ microcrystalline powders. Bi3TeBO9:Yb3+ doped with different concentrations of Yb3+ ions (0.5, 1.0, 2.5, 4.0, and 7.5 at %) were synthesized by means of the modified Pechini method. The structure, morphology, and elemental composition of samples were investigated using X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy techniques. The μ-Raman spectroscopic measurements of Bi3TeBO9:Yb3+ allowed us to determine the energy vibrations of characteristic molecular groups BO3 and TeO6 present in the Bi3TeBO9 matrix. Emissions of Bi3TeBO9:Yb3+ powders were measured upon excitation at 330 nm by Bi3+ ions (the 1S0 → 3P1 transition) in VIS (Bi3+ ions emission assigned to the 3P0 → 1S0 transition) and NIR (Yb3+ ions emission assigned to the 2F5/2 → 2F7/2) spectral ranges. In particular, the strongest emission band of Yb3+ ions at 975 nm was observed in the spectrum of Bi3TeBO9:Yb3+ doped with 4.0 at % of Yb3+ ions. This suggests that Bi3+ ions present in the Bi3TeBO9 matrix can be used as a UV absorption sensitizer for Yb3+ ions in the considered systems. Moreover, the decay times of 3P0 → 1S0 transitions of Bi3+ ions (emission in VIS with maximum at 550 nm) and 2F5/2 → 2F7/2 transitions of Yb3+ ions (emission in NIR at 975 nm) upon excitation at 330 nm were measured. The calculated energy transfer efficiency and quantum efficiency coefficients confirmed the effective energy transfer from Bi3+ to Yb3+ ions in the Bi3TeBO9:Yb3+ system. The obtained results show that Bi3TeBO9:Yb3+ powders, as efficient UV to NIR spectral converters, can be potentially used in c-Si solar cell technology, enhancing the photovoltaic effect.
16.
Nowicki, Marek
SEM observations for biology and medicine without special sample preparation Conference
XVIII International Conference on Electron Microscopy, Zakopane, June 9-12 , 2024, (Poster presentation).
@conference{ICEM2024_MN,
title = {SEM observations for biology and medicine without special sample preparation},
author = {Marek Nowicki},
url = {https://nano.put.poznan.pl/wp-content/uploads/2024/10/ICEM2024_MN.pdf},
year = {2024},
date = {2024-07-10},
booktitle = {XVIII International Conference on Electron Microscopy},
address = {Zakopane, June 9-12 },
abstract = {The presentation will show and discuss SEM images of living objects. All observations were made without special sample preparation (e.g. critical point drying, carbon coating). It was crucial to perform measurements in a very short time after placing the objects in a low vacuum.
The following will be presented: an analysis of the structure of eriophyoidea (dimensions) for a better understanding of their biology, an analysis of the central catheters of patients with bacterial and fungal infections, and an analysis of the dissolution of foliar fertilizer used in plant cultivation.
In each of these cases, a scanning electron microscope operating in a low vacuum was a sufficient tool to obtain valuable results.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320},
note = {Poster presentation},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
The presentation will show and discuss SEM images of living objects. All observations were made without special sample preparation (e.g. critical point drying, carbon coating). It was crucial to perform measurements in a very short time after placing the objects in a low vacuum.
The following will be presented: an analysis of the structure of eriophyoidea (dimensions) for a better understanding of their biology, an analysis of the central catheters of patients with bacterial and fungal infections, and an analysis of the dissolution of foliar fertilizer used in plant cultivation.
In each of these cases, a scanning electron microscope operating in a low vacuum was a sufficient tool to obtain valuable results.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
The following will be presented: an analysis of the structure of eriophyoidea (dimensions) for a better understanding of their biology, an analysis of the central catheters of patients with bacterial and fungal infections, and an analysis of the dissolution of foliar fertilizer used in plant cultivation.
In each of these cases, a scanning electron microscope operating in a low vacuum was a sufficient tool to obtain valuable results.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
17.
El-Ahmar, Semir; Jankowski, Jakub; Czaja, Paweł; Reddig, Wiktoria; Przychodnia, Marta; Raczyński, Jan; Koczorowski, Wojciech
Magnetic Diagnostics in Extreme Temperature Conditions Conference
14th European Magnetic Sensors and Actuators Conference (EMSA), Kosice, June 24-27, 2024, (Oral presentation).
@conference{EMSA2024_SA,
title = {Magnetic Diagnostics in Extreme Temperature Conditions},
author = {Semir El-Ahmar and Jakub Jankowski and Paweł Czaja and Wiktoria Reddig and Marta Przychodnia and Jan Raczyński and Wojciech Koczorowski},
url = {https://nano.put.poznan.pl/wp-content/uploads/2024/07/EMSA2024_SA.pdf},
year = {2024},
date = {2024-06-26},
urldate = {2024-06-26},
booktitle = {14th European Magnetic Sensors and Actuators Conference (EMSA)},
address = {Kosice, June 24-27},
abstract = {Magnetic field detection devices are highly valuable in many industries, thanks to the fact that they can measure various quantities such as position, movement, direction, and rotational speed. Nowadays, there is a high demand for electronics that canfunction reliably in harsh environments, including those that can withstand extreme temperatures. Traditional electronics design often requiresactive or passive cooling, but thismay not always be practical or effective. Hence, there is an increasing need for extremeenvironment electronics, particularly in the automotive,space, defense, and energy indus-tries. Our latest reports on semiconductor-based Hall sensors operating in extreme conditions are limited to the temperature range from liquid nitrogen (LN) up to 350C. Research on alternative solutions based on monolayer graphene, in turn, presents tests inthe LN - 500C range in a magnetic field below 1 T. Our research exploresthe potentialof utilizing classic semiconductor thin-film material (donor-doped indium antimonide) asan active layer for a Hall effect sensor that can measure magnetic fields in extreme temperature range from liquid helium (LHe) temperatures up to 350C. We verify the usability, thermal stability of our device, and the linearity of its signal in the magnetic field rangeabove 1T. We also propose a solution to the problem of the sensor package suitable for an extremely wide range of work. We present a full-fledged magnetic field sensor that canmeet industrial requirements, being manufactured using almost exclusively the academic infrastructure of the Poznan University of Technology. Ourfinding is a step forward in thedevelopment of magnetic diagnostic devices capable of operating in a broadly defined extreme environments.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020},
note = {Oral presentation},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
Magnetic field detection devices are highly valuable in many industries, thanks to the fact that they can measure various quantities such as position, movement, direction, and rotational speed. Nowadays, there is a high demand for electronics that canfunction reliably in harsh environments, including those that can withstand extreme temperatures. Traditional electronics design often requiresactive or passive cooling, but thismay not always be practical or effective. Hence, there is an increasing need for extremeenvironment electronics, particularly in the automotive,space, defense, and energy indus-tries. Our latest reports on semiconductor-based Hall sensors operating in extreme conditions are limited to the temperature range from liquid nitrogen (LN) up to 350C. Research on alternative solutions based on monolayer graphene, in turn, presents tests inthe LN - 500C range in a magnetic field below 1 T. Our research exploresthe potentialof utilizing classic semiconductor thin-film material (donor-doped indium antimonide) asan active layer for a Hall effect sensor that can measure magnetic fields in extreme temperature range from liquid helium (LHe) temperatures up to 350C. We verify the usability, thermal stability of our device, and the linearity of its signal in the magnetic field rangeabove 1T. We also propose a solution to the problem of the sensor package suitable for an extremely wide range of work. We present a full-fledged magnetic field sensor that canmeet industrial requirements, being manufactured using almost exclusively the academic infrastructure of the Poznan University of Technology. Ourfinding is a step forward in thedevelopment of magnetic diagnostic devices capable of operating in a broadly defined extreme environments.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
18.
Reddig, Wiktoria; El-Ahmar, Semir; Ciuk, Tymoteusz; Prokopowicz, Rafał
Investigating Neutron Radiation Induced Damage on Novel Type of Hall-Effect Sensors Conference
14th European Magnetic Sensors and Actuators Conference (EMSA), Kosice, June 24-27, 2024, (Oral presentation).
@conference{EMSA2024_WR,
title = {Investigating Neutron Radiation Induced Damage on Novel Type of Hall-Effect Sensors},
author = {Wiktoria Reddig and Semir El-Ahmar and Tymoteusz Ciuk and Rafał Prokopowicz},
url = {https://nano.put.poznan.pl/wp-content/uploads/2024/07/EMSA2024_WR.pdf},
year = {2024},
date = {2024-06-25},
urldate = {2024-06-25},
booktitle = {14th European Magnetic Sensors and Actuators Conference (EMSA)},
journal = {European Magnetic Sensors and Actuators Conference (EMSA 2024)},
address = {Kosice, June 24-27},
abstract = {Our research exploresthe potential use of semiconductor thin-film materials andgraphene-based structures for magnetic field detection in harsh environments, par-ticularly in thermonuclear reactors. We have conducted preliminary research to investi-gatetheimpactofhightemperature and neutron irradiation on the electrical prop-erties of these sensors. Our studies involved a 2D material made from hydrogen-intercala-ted quasi-free-standing graphene on semi-insulating 4H-SiC (0001), passivated with anAl2O3layer, and a donor-doped InSb-based thin-film on a semi-insulating GaAs sub-strate. Our research has shown how described systems were affected by fast neutron fluence of 7×10^17cm^(−2) using MARIA research nuclear reactor. Based on Hall effect measurements and micro-Raman analysis, we conjecture that for graphene-based structurea ter irradiation, the primary factor impacting the electrical characteristics is the depletion of atoms in the hydrogen layer. This phenomenon is expected to decrease the surfacearea of intercalation which becomes too scarce to support graphene separation. However, we observe self-healing abilities at temperatures higher than 200C. To determine if these materials are suitable for magnetic field sensing in thermonuclear reactors, we need to understand how they will be affected by stronger neutron radiation. Therefore, we investigate new modes of damage in 5 times greater neutron fluence (40×10^17cm^(−2)) and how the effects of neutron irradiation differ when the graphene-based sensor’s substrate polytype is changed to 6H-SiC (0001).
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020},
note = {Oral presentation},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
Our research exploresthe potential use of semiconductor thin-film materials andgraphene-based structures for magnetic field detection in harsh environments, par-ticularly in thermonuclear reactors. We have conducted preliminary research to investi-gatetheimpactofhightemperature and neutron irradiation on the electrical prop-erties of these sensors. Our studies involved a 2D material made from hydrogen-intercala-ted quasi-free-standing graphene on semi-insulating 4H-SiC (0001), passivated with anAl2O3layer, and a donor-doped InSb-based thin-film on a semi-insulating GaAs sub-strate. Our research has shown how described systems were affected by fast neutron fluence of 7×10^17cm^(−2) using MARIA research nuclear reactor. Based on Hall effect measurements and micro-Raman analysis, we conjecture that for graphene-based structurea ter irradiation, the primary factor impacting the electrical characteristics is the depletion of atoms in the hydrogen layer. This phenomenon is expected to decrease the surfacearea of intercalation which becomes too scarce to support graphene separation. However, we observe self-healing abilities at temperatures higher than 200C. To determine if these materials are suitable for magnetic field sensing in thermonuclear reactors, we need to understand how they will be affected by stronger neutron radiation. Therefore, we investigate new modes of damage in 5 times greater neutron fluence (40×10^17cm^(−2)) and how the effects of neutron irradiation differ when the graphene-based sensor’s substrate polytype is changed to 6H-SiC (0001).
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
19.
Nowacki, Krzysztof; Kubiak, Anita; Nowicki, Marek; Tsurkan, Dmitry; Ehrlich, Hermann; Jesionowski, Teofil
3D Spongin Scaffolds as Templates for Electro-Assisted Deposition of Selected Iron Oxides Journal Article
In: Biomimetics, vol. 9, iss. 7, pp. 387, 2024.
@article{Nowacki2024,
title = {3D Spongin Scaffolds as Templates for Electro-Assisted Deposition of Selected Iron Oxides},
author = {Krzysztof Nowacki and Anita Kubiak and Marek Nowicki and Dmitry Tsurkan and Hermann Ehrlich and Teofil Jesionowski},
doi = {10.3390/biomimetics9070387},
year = {2024},
date = {2024-06-25},
journal = {Biomimetics},
volume = {9},
issue = {7},
pages = {387},
abstract = {The skeletons of marine sponges are ancient biocomposite structures in which mineral phases are formed on 3D organic matrices. In addition to calcium- and silicate-containing biominerals, iron ions play an active role in skeleton formation in some species of bath sponges in the marine environment, which is a result of the biocorrosion of the metal structures on which these sponges settle. The interaction between iron ions and biopolymer spongin has motivated the development of selected extreme biomimetics approaches with the aim of creating new functional composites to use in environmental remediation and as adsorbents for heavy metals. In this study, for the first time, microporous 3D spongin scaffolds isolated from the cultivated marine bath sponge Hippospongia communis were used for electro-assisted deposition of iron oxides such as goethite [α-FeO(OH)] and lepidocrocite [γ-FeO(OH)]. The obtained iron oxide phases were characterized with the use of scanning electron microscopy, FTIR, and X-ray diffraction. In addition, mechanisms of electroassisted deposition of iron oxides on the surface of spongin, as a sustainable biomaterial, are proposed and discussed.
Funding from the Ministry of Education and Science (Poland), Project No. 0911/SBAD/2402 and 0912/SBAD/2406},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The skeletons of marine sponges are ancient biocomposite structures in which mineral phases are formed on 3D organic matrices. In addition to calcium- and silicate-containing biominerals, iron ions play an active role in skeleton formation in some species of bath sponges in the marine environment, which is a result of the biocorrosion of the metal structures on which these sponges settle. The interaction between iron ions and biopolymer spongin has motivated the development of selected extreme biomimetics approaches with the aim of creating new functional composites to use in environmental remediation and as adsorbents for heavy metals. In this study, for the first time, microporous 3D spongin scaffolds isolated from the cultivated marine bath sponge Hippospongia communis were used for electro-assisted deposition of iron oxides such as goethite [α-FeO(OH)] and lepidocrocite [γ-FeO(OH)]. The obtained iron oxide phases were characterized with the use of scanning electron microscopy, FTIR, and X-ray diffraction. In addition, mechanisms of electroassisted deposition of iron oxides on the surface of spongin, as a sustainable biomaterial, are proposed and discussed.
Funding from the Ministry of Education and Science (Poland), Project No. 0911/SBAD/2402 and 0912/SBAD/2406
Funding from the Ministry of Education and Science (Poland), Project No. 0911/SBAD/2402 and 0912/SBAD/2406
20.
Kałuziak, Piotr; Raczyński, Jan; El-Ahmar, Semir; Koczorowski, Wojciech
Fabrication of Thin-layer InSb-based Planar Devices Conference
The European Conference on Surface Science - ECOSS 37 , Harrogate, June 17-21, 2024, (Oral presentation).
@conference{ECOSS37_PK,
title = {Fabrication of Thin-layer InSb-based Planar Devices},
author = {Piotr Kałuziak and Jan Raczyński and Semir El-Ahmar and Wojciech Koczorowski},
url = {https://nano.put.poznan.pl/wp-content/uploads/2024/07/ECOSS37_PK.pdf},
year = {2024},
date = {2024-06-18},
booktitle = {The European Conference on Surface Science - ECOSS 37 },
address = {Harrogate, June 17-21},
abstract = {For many decades, indium antimonide (InSb) has been a well-studied material that is highly valued for its low energy gap of approximately 0.18 eV at room temperature, as well as its exceptional electric charge carriers mobility value, which stands at 77000 cm2/(V·s). The development of device fabrication technologies opens new possibilities for InSb thin layers. The lithography process application followed by metals deposition under vacuum conditions to the graphene layer makes it possible to fabricate sophisticated planar architectures with unique useability. A slight modification of such structuring procedure allows the transfer of the technology to layers of greater thickness, e.g. InSb. High-quality InSb thin films are fabricated using the flash evaporation technique under HV conditions on a gallium arsenide (GaAs) substrate. Following the modified structurisation procedure the Hall and TLM structures were fabricated to determine the galvanometric properties of the InSb-based hybrid systems. In addition, the structure to test the efficacy of the strip magneto sensor (SMS) in the InSb was proposed. As a result of the high charge carrier mobility of InSb, it is predicted to obtain a significant magnetoresistive effect in specific geometry configurations.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420 and 0512/SBAD/6217
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020},
note = {Oral presentation},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
For many decades, indium antimonide (InSb) has been a well-studied material that is highly valued for its low energy gap of approximately 0.18 eV at room temperature, as well as its exceptional electric charge carriers mobility value, which stands at 77000 cm2/(V·s). The development of device fabrication technologies opens new possibilities for InSb thin layers. The lithography process application followed by metals deposition under vacuum conditions to the graphene layer makes it possible to fabricate sophisticated planar architectures with unique useability. A slight modification of such structuring procedure allows the transfer of the technology to layers of greater thickness, e.g. InSb. High-quality InSb thin films are fabricated using the flash evaporation technique under HV conditions on a gallium arsenide (GaAs) substrate. Following the modified structurisation procedure the Hall and TLM structures were fabricated to determine the galvanometric properties of the InSb-based hybrid systems. In addition, the structure to test the efficacy of the strip magneto sensor (SMS) in the InSb was proposed. As a result of the high charge carrier mobility of InSb, it is predicted to obtain a significant magnetoresistive effect in specific geometry configurations.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420 and 0512/SBAD/6217
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420 and 0512/SBAD/6217
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
21.
Raczyński, Jan; Nowaczyk, Jakub; Koczorowski, Wojciech
Thermal evolution of the metal/PtSe2 systems studied by Raman Spectroscopy Conference
The European Conference on Surface Science - ECOSS 37 , Harrogate, June 17-21, 2024, (Oral presentation).
@conference{ECOSS37_JR,
title = {Thermal evolution of the metal/PtSe2 systems studied by Raman Spectroscopy},
author = {Jan Raczyński and Jakub Nowaczyk and Wojciech Koczorowski},
url = {https://nano.put.poznan.pl/wp-content/uploads/2024/07/ECOSS37_JR.pdf},
year = {2024},
date = {2024-06-17},
urldate = {2024-06-17},
booktitle = {The European Conference on Surface Science - ECOSS 37 },
address = {Harrogate, June 17-21},
abstract = {The discovery of graphene and its physical properties started a new era in the investigating of thin layer materials. Today, these materials also include Transition Metal Dichalcogenides(TMD), which provide a wide range of physical properties, such as the values of charge carrier mobility and bandgap energy, which depend on the layer thickness. One of the most promising TMD materials is PtSe2 with predicted high charge carrier mobility at room temperature(RT). In that case, it is crucial to determine the physical properties of the thin layer as an active channel in the planar sensor device. To fully understand of the formed interface metal/PtSe2 interface, it is necessary to perform measurements to give insight in to the active channel and interface physical properties both at RT and during thermal treatment. In that case, one of the most crucial methodologies is Raman spectroscopy allow analyze of the characteristic mods’ position transform it into the change of the doping and stress level in the sample PtSe2. The properties of the active layer of PtSe2, especially the changes in the stress and doping type levels at RT and during elevated temperature(up to 473K) will be discussed in this presentation. Simultaneously emphasis will be placed on the properties of the metal(eg.Ti,Ni,Pt)/PtSe2 interfaces and the impact of the deposited metallic layer and thermal treatment on the PtSe2 bulk transformation. The application of the temperature dependent correlation plots allows the determination of the temperature range work of PtSe2 based system for a potential planar device will be presented and discussed.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the National Science Centre (Poland), Project No. 2019/35/O/ST5/01940, NAWA grant No.PPN/STA/2021/1/00043},
note = {Oral presentation},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
The discovery of graphene and its physical properties started a new era in the investigating of thin layer materials. Today, these materials also include Transition Metal Dichalcogenides(TMD), which provide a wide range of physical properties, such as the values of charge carrier mobility and bandgap energy, which depend on the layer thickness. One of the most promising TMD materials is PtSe2 with predicted high charge carrier mobility at room temperature(RT). In that case, it is crucial to determine the physical properties of the thin layer as an active channel in the planar sensor device. To fully understand of the formed interface metal/PtSe2 interface, it is necessary to perform measurements to give insight in to the active channel and interface physical properties both at RT and during thermal treatment. In that case, one of the most crucial methodologies is Raman spectroscopy allow analyze of the characteristic mods’ position transform it into the change of the doping and stress level in the sample PtSe2. The properties of the active layer of PtSe2, especially the changes in the stress and doping type levels at RT and during elevated temperature(up to 473K) will be discussed in this presentation. Simultaneously emphasis will be placed on the properties of the metal(eg.Ti,Ni,Pt)/PtSe2 interfaces and the impact of the deposited metallic layer and thermal treatment on the PtSe2 bulk transformation. The application of the temperature dependent correlation plots allows the determination of the temperature range work of PtSe2 based system for a potential planar device will be presented and discussed.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the National Science Centre (Poland), Project No. 2019/35/O/ST5/01940, NAWA grant No.PPN/STA/2021/1/00043
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2420
Funding from the National Science Centre (Poland), Project No. 2019/35/O/ST5/01940, NAWA grant No.PPN/STA/2021/1/00043
22.
Grzelak, Magdalena; Szołyga, Mariusz; Nowicki, Marek; Sałasińska, Kamila; Celiński, Maciej
Unraveling the Impact of Open-Cage Silsesquioxane Modifiers on Material Properties in Epoxy Resin Composites Journal Article
In: Industrial & Engineering Chemistry Research, vol. 63, iss. 20, pp. 9093-9106, 2024.
@article{Grzelak2024,
title = {Unraveling the Impact of Open-Cage Silsesquioxane Modifiers on Material Properties in Epoxy Resin Composites},
author = {Magdalena Grzelak and Mariusz Szołyga and Marek Nowicki and Kamila Sałasińska and Maciej Celiński},
doi = {10.1021/acs.iecr.4c01404},
year = {2024},
date = {2024-05-10},
journal = {Industrial & Engineering Chemistry Research},
volume = {63},
issue = {20},
pages = {9093-9106},
abstract = {Herein, this research focuses on a series of hybrid epoxy materials containing modifiers based on open-cage silsesquioxanes. The study involves the synthesis of various open-cage silsesquioxanes (via hydrosilylation reaction) featuring extended epoxy groups, allowing for cross-linking with epoxy resin and an amine hardener. The core structure of silsesquioxanes and the linker length and nature between the IC-POSS (incompletely condensed silsesquioxane) framework and epoxy group are crucial parameters affecting the cured material properties. This article presents a comprehensive investigation into the synthesis, characterization, and impact of epoxy-functionalized open-cage silsesquioxane modifiers on epoxy resin properties (morphology, thermal, surface, and mechanical properties), offering valuable insights into developing epoxy cured composites.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Herein, this research focuses on a series of hybrid epoxy materials containing modifiers based on open-cage silsesquioxanes. The study involves the synthesis of various open-cage silsesquioxanes (via hydrosilylation reaction) featuring extended epoxy groups, allowing for cross-linking with epoxy resin and an amine hardener. The core structure of silsesquioxanes and the linker length and nature between the IC-POSS (incompletely condensed silsesquioxane) framework and epoxy group are crucial parameters affecting the cured material properties. This article presents a comprehensive investigation into the synthesis, characterization, and impact of epoxy-functionalized open-cage silsesquioxane modifiers on epoxy resin properties (morphology, thermal, surface, and mechanical properties), offering valuable insights into developing epoxy cured composites.
23.
Zhezhera, Taras; Gluchowski, Paweł; Nowicki, Marek; Chrunik, Maciej; Miklaszewski, Andrzej; Kasprowicz, Dobrosława
Pressure modified upconversion luminescence of Yb3+ and Er3+ - doped Bi3TeBO9 ceramics Journal Article
In: Journal of Luminescence, vol. 268, pp. 120401, 2024.
@article{Zhezhera2024,
title = {Pressure modified upconversion luminescence of Yb3+ and Er3+ - doped Bi3TeBO9 ceramics},
author = {Taras Zhezhera and Paweł Gluchowski and Marek Nowicki and Maciej Chrunik and Andrzej Miklaszewski and Dobrosława Kasprowicz},
doi = {10.1016/j.jlumin.2023.120401},
year = {2024},
date = {2024-04-10},
journal = {Journal of Luminescence},
volume = {268},
pages = {120401},
abstract = {Yb3+ and Er3+-doped Bi3TeBO9 ceramics exhibit efficient upconversion luminescence in the visible spectral range upon laser diode excitation at 975 nm. Bi3TeBO9:Yb3+/Er3+ powder was prepared by means of the modified Pechini method. A series of Bi3TeBO9:Yb3+/Er3+ ceramic samples was fabricated using the high-pressure low-temperature technique, by sintering Bi3TeBO9:Yb3+/Er3+ powder under different pressures (2, 4, 6 or 8 GPa). The structure and morphology of the above-mentioned samples were analyzed using XRD, SEM and EDX measurements. The phonon energy of Bi3TeBO9 matrix associated with the vibrations of TeO6 and BO3 molecular groups was revealed using μ-Raman spectroscopy. The low phonon energy of Bi3TeBO9 matrix allows the effective energy transfer between Yb3+ and Er3+ ions as well as the 2H11/2 → 4I15/2, 4S3/2 → 4I15/2 and 4F9/2 → 4I15/2 transitions from the excited to ground states of Er3+ ions, resulting in efficient upconversion emission at 523, 540 and 653 nm, respectively. The decay times determined for all analyzed emissions were longer for Bi3TeBO9:Yb3+/Er3+ ceramics than for the powder sample. The highest values of decay times were detected for the ceramics obtained under a pressure of 8 GPa and were equal to 174, 172 and 175 μs for the emissions at 523, 540 and 653 nm, respectively. The obtained results suggest that Bi3TeBO9:Yb3+/Er3+ ceramics can be proposed as efficient spectral converters in the new type solar cells enhancing the efficiency of the photovoltaic effect.
Funding from the Ministry of Education and Science (Poland), Project No. 0511/SBAD/2351},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Yb3+ and Er3+-doped Bi3TeBO9 ceramics exhibit efficient upconversion luminescence in the visible spectral range upon laser diode excitation at 975 nm. Bi3TeBO9:Yb3+/Er3+ powder was prepared by means of the modified Pechini method. A series of Bi3TeBO9:Yb3+/Er3+ ceramic samples was fabricated using the high-pressure low-temperature technique, by sintering Bi3TeBO9:Yb3+/Er3+ powder under different pressures (2, 4, 6 or 8 GPa). The structure and morphology of the above-mentioned samples were analyzed using XRD, SEM and EDX measurements. The phonon energy of Bi3TeBO9 matrix associated with the vibrations of TeO6 and BO3 molecular groups was revealed using μ-Raman spectroscopy. The low phonon energy of Bi3TeBO9 matrix allows the effective energy transfer between Yb3+ and Er3+ ions as well as the 2H11/2 → 4I15/2, 4S3/2 → 4I15/2 and 4F9/2 → 4I15/2 transitions from the excited to ground states of Er3+ ions, resulting in efficient upconversion emission at 523, 540 and 653 nm, respectively. The decay times determined for all analyzed emissions were longer for Bi3TeBO9:Yb3+/Er3+ ceramics than for the powder sample. The highest values of decay times were detected for the ceramics obtained under a pressure of 8 GPa and were equal to 174, 172 and 175 μs for the emissions at 523, 540 and 653 nm, respectively. The obtained results suggest that Bi3TeBO9:Yb3+/Er3+ ceramics can be proposed as efficient spectral converters in the new type solar cells enhancing the efficiency of the photovoltaic effect.
Funding from the Ministry of Education and Science (Poland), Project No. 0511/SBAD/2351
Funding from the Ministry of Education and Science (Poland), Project No. 0511/SBAD/2351
24.
Przychodnia, Marta
Preparation and characterization of two-dimensional surface alloys of rare earth metals on Pt(111) PhD Thesis
2024, (Poznan University of Technology).
@phdthesis{PrzychodniaPhD2024,
title = {Preparation and characterization of two-dimensional surface alloys of rare earth metals on Pt(111)},
author = {Marta Przychodnia},
url = {https://sin.put.poznan.pl/files/download/55371},
year = {2024},
date = {2024-03-01},
urldate = {2024-03-01},
abstract = {Surface alloys are of great importance in the development of modern technologies such as modern electronics (spintronics and molecular electronics) or the energy industry. In this dissertation, I have investigated two surface alloys systems of rare earth metal with platinum to address their structural, electronic, and magnetic properties. The mentioned systems form two types of surface alloys with the stoichiometry rare earth metal-Pt2 and rare earth metal-Pt5. In the case of the Gd-Pt system, both types coexist, while the Dy-Pt system forms only DyPt2. All surface alloys exhibit long-range and short-range orders which makes them ideal substrates for the templated growth of molecular devices or dense-packed nanodot networks. Depending on the stoichiometry and termination layer, they also differ in reactivity and electronic and magnetic properties. The properties of these surface alloys rely not only on the chosen rare earth metal but also on the number of surface alloy layers.},
note = {Poznan University of Technology},
keywords = {},
pubstate = {published},
tppubtype = {phdthesis}
}
Surface alloys are of great importance in the development of modern technologies such as modern electronics (spintronics and molecular electronics) or the energy industry. In this dissertation, I have investigated two surface alloys systems of rare earth metal with platinum to address their structural, electronic, and magnetic properties. The mentioned systems form two types of surface alloys with the stoichiometry rare earth metal-Pt2 and rare earth metal-Pt5. In the case of the Gd-Pt system, both types coexist, while the Dy-Pt system forms only DyPt2. All surface alloys exhibit long-range and short-range orders which makes them ideal substrates for the templated growth of molecular devices or dense-packed nanodot networks. Depending on the stoichiometry and termination layer, they also differ in reactivity and electronic and magnetic properties. The properties of these surface alloys rely not only on the chosen rare earth metal but also on the number of surface alloy layers.
25.
Nowak, Ewelina; Szybowicz, Mirosław; Sędzicki, Przemysław; Stachowiak, Alicja; Piechowiak, Daria; Trzcinski, Marek; Koczorowski, Wojciech; Derkowska-Zielińska, Beata; Miklaszewski, Andrzej; Chłopocka, Edyta
Spectroscopic study on the influence of post-processing annealing on ZnO films produced with a sol-gel method Journal Article
In: Thin Solid Films, vol. 788, pp. 140154, 2024.
@article{TSF2024,
title = {Spectroscopic study on the influence of post-processing annealing on ZnO films produced with a sol-gel method},
author = {Ewelina Nowak and Mirosław Szybowicz and Przemysław Sędzicki and Alicja Stachowiak and Daria Piechowiak and Marek Trzcinski and Wojciech Koczorowski and Beata Derkowska-Zielińska and Andrzej Miklaszewski and Edyta Chłopocka},
doi = {10.1016/j.tsf.2023.140154},
year = {2024},
date = {2024-01-15},
journal = {Thin Solid Films},
volume = {788},
pages = {140154},
abstract = {Zinc oxide is still one of the most crucial wide bandgap semiconductors for electronics. It is highly used because of its ease of production, doping, and low cost. However, in the production of zinc oxide materials, it is necessary to consider the formation of native defects, which strongly influence the material's properties. Therefore, it is essential to understand the behavior in thin films during the annealing process. The presented work shows the appearance of oxygen and zinc vacancies during annealing at specific temperatures and times. Samples annealed in an oxygen-rich atmosphere change their structural and chemical properties. Specific defects may be detected using Raman spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. In addition, energy bandgap, defects energy, and the thermal dependence of luminescence emission were analyzed as the primary indicators of the changes during the sintering.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2120 and 0511/SBAD/0018},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Zinc oxide is still one of the most crucial wide bandgap semiconductors for electronics. It is highly used because of its ease of production, doping, and low cost. However, in the production of zinc oxide materials, it is necessary to consider the formation of native defects, which strongly influence the material's properties. Therefore, it is essential to understand the behavior in thin films during the annealing process. The presented work shows the appearance of oxygen and zinc vacancies during annealing at specific temperatures and times. Samples annealed in an oxygen-rich atmosphere change their structural and chemical properties. Specific defects may be detected using Raman spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. In addition, energy bandgap, defects energy, and the thermal dependence of luminescence emission were analyzed as the primary indicators of the changes during the sintering.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2120 and 0511/SBAD/0018
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2120 and 0511/SBAD/0018
2023
26.
Raczyński, Jan; El-Ahmar, Semir; Nowak, Ewelina; Nowicki, Marek; Czajka, Ryszard; Szybowicz, Mirosław; Koczorowski, Wojciech
Processing of PtSe2 ultra-thin layers using Ar plasma for applications in planar devices Conference
XII Workshop on Applications of Scanning Probe Microscopy – STM/AFM 2023, Zakopane, November 29 - December 3, 2023, (Oral presentation).
@conference{ZAKOPANE2023RC,
title = {Processing of PtSe2 ultra-thin layers using Ar plasma for applications in planar devices },
author = {Jan Raczyński and Semir El-Ahmar and Ewelina Nowak and Marek Nowicki and Ryszard Czajka and Mirosław Szybowicz and Wojciech Koczorowski},
url = {https://www.nanosam.pl/stmafm2023/files/abstracts_2023_v16.pdf},
year = {2023},
date = {2023-12-01},
urldate = {2023-12-01},
booktitle = {XII Workshop on Applications of Scanning Probe Microscopy – STM/AFM 2023},
address = {Zakopane, November 29 - December 3},
abstract = {The systems containing the ultra-thin layers of TMD materials (e.g. PtSe2) exhibit interesting physical properties and can be easily integrated into CMOS technology [1].We propose a procedure for the fabrication of simple electronic devices based on PtSe2 ultra-thin layers using Ar plasma processing on commercially available PtSe2/Al2O3 samples [2]. The report contains a detailed analysis of the influence of the Ar plasma treatment time on a system comprising thin PtSe2 layers with a thickness of 1 to 3 monomolecular layers. The impact of the process on the physical properties of the system is also analyzed using Raman Spectroscopy and Atomic Force Microscopy techniques. The electrical properties of devices based on 3ML PtSe2 are characterized using so called Transfer Line Measurements with electrical contacts consisting of the Ni buffer layer and an Au outer electrode contact (with thicknesses of 20 nm and 40 nm, respectively). The results confirm the effectiveness of the proposed approach in the fabrication of planar nano-electronic devices (1÷3 ML thickness of PtSe2) [3].
Figure 1. Representative AFM images (area of 1.5 × 1.5 μm2) of the samples that present the morphology of the continuous PtSe2 layers with thicknesses: A) 1ML PtSe2, B) 2ML PtSe2, and C) 3ML PtSe2. The z range in all images is 1.75 nm. D) Raman spectra of the samples collected before plasma processing. The intensities are normalized to the maximum value in the individual spectra. The Raman modes corresponding to the PtSe2 layer and the Al2O3 substrate are signed [3].
Acknowledgements:
The authors acknowledge the financial support of the National Science Center, Poland, under Project No. 2019/35/O/ST5/01940 and partially the financial support of the Ministry of Education and Science, Poland under Project No. 0512/SBAD/2320.
[1] J. Raczynski, E. Nowak, M. Nowicki, S.El-Ahmar, M. Szybowicz, W. Koczorowski, Materials Science and Engineering B, 2023, 297, 116728.
[2] S. Joseph, J. Mohan, S. Lakshmy, T. Simil, B. Chakraborty, T. Sabu, N. Kalarikkal, Materials Chemistry and Physics, 2023, 297, 127332.
[3] W. Koczorowski, J. Raczyński, S. El-Ahmar, M. Nowicki, M. Szybowicz, R. Czajka, Materials Science in Semiconductor Processing, 2023, 167, 107814.},
note = {Oral presentation},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
The systems containing the ultra-thin layers of TMD materials (e.g. PtSe2) exhibit interesting physical properties and can be easily integrated into CMOS technology [1].We propose a procedure for the fabrication of simple electronic devices based on PtSe2 ultra-thin layers using Ar plasma processing on commercially available PtSe2/Al2O3 samples [2]. The report contains a detailed analysis of the influence of the Ar plasma treatment time on a system comprising thin PtSe2 layers with a thickness of 1 to 3 monomolecular layers. The impact of the process on the physical properties of the system is also analyzed using Raman Spectroscopy and Atomic Force Microscopy techniques. The electrical properties of devices based on 3ML PtSe2 are characterized using so called Transfer Line Measurements with electrical contacts consisting of the Ni buffer layer and an Au outer electrode contact (with thicknesses of 20 nm and 40 nm, respectively). The results confirm the effectiveness of the proposed approach in the fabrication of planar nano-electronic devices (1÷3 ML thickness of PtSe2) [3].
Figure 1. Representative AFM images (area of 1.5 × 1.5 μm2) of the samples that present the morphology of the continuous PtSe2 layers with thicknesses: A) 1ML PtSe2, B) 2ML PtSe2, and C) 3ML PtSe2. The z range in all images is 1.75 nm. D) Raman spectra of the samples collected before plasma processing. The intensities are normalized to the maximum value in the individual spectra. The Raman modes corresponding to the PtSe2 layer and the Al2O3 substrate are signed [3].
Acknowledgements:
The authors acknowledge the financial support of the National Science Center, Poland, under Project No. 2019/35/O/ST5/01940 and partially the financial support of the Ministry of Education and Science, Poland under Project No. 0512/SBAD/2320.
[1] J. Raczynski, E. Nowak, M. Nowicki, S.El-Ahmar, M. Szybowicz, W. Koczorowski, Materials Science and Engineering B, 2023, 297, 116728.
[2] S. Joseph, J. Mohan, S. Lakshmy, T. Simil, B. Chakraborty, T. Sabu, N. Kalarikkal, Materials Chemistry and Physics, 2023, 297, 127332.
[3] W. Koczorowski, J. Raczyński, S. El-Ahmar, M. Nowicki, M. Szybowicz, R. Czajka, Materials Science in Semiconductor Processing, 2023, 167, 107814.
Figure 1. Representative AFM images (area of 1.5 × 1.5 μm2) of the samples that present the morphology of the continuous PtSe2 layers with thicknesses: A) 1ML PtSe2, B) 2ML PtSe2, and C) 3ML PtSe2. The z range in all images is 1.75 nm. D) Raman spectra of the samples collected before plasma processing. The intensities are normalized to the maximum value in the individual spectra. The Raman modes corresponding to the PtSe2 layer and the Al2O3 substrate are signed [3].
Acknowledgements:
The authors acknowledge the financial support of the National Science Center, Poland, under Project No. 2019/35/O/ST5/01940 and partially the financial support of the Ministry of Education and Science, Poland under Project No. 0512/SBAD/2320.
[1] J. Raczynski, E. Nowak, M. Nowicki, S.El-Ahmar, M. Szybowicz, W. Koczorowski, Materials Science and Engineering B, 2023, 297, 116728.
[2] S. Joseph, J. Mohan, S. Lakshmy, T. Simil, B. Chakraborty, T. Sabu, N. Kalarikkal, Materials Chemistry and Physics, 2023, 297, 127332.
[3] W. Koczorowski, J. Raczyński, S. El-Ahmar, M. Nowicki, M. Szybowicz, R. Czajka, Materials Science in Semiconductor Processing, 2023, 167, 107814.
27.
Duszczak, Julia; Mrzygłód, Aleksandra; Mituła, Katarzyna; Dutkiewicz, Michał; Januszewski, Rafał; Rzonsowska, Monika; Dudziec, Beata; Nowicki, Marek; Kubicki, Maciej
In: Inorganic Chemistry Frontiers, vol. 10, iss. 3, pp. 888 - 899, 2023.
@article{duszczak2023,
title = {Distinct insight into the use of difunctional double-decker silsesquioxanes as building blocks for alternating A–B type macromolecular frameworks},
author = {Julia Duszczak and Aleksandra Mrzygłód and Katarzyna Mituła and Michał Dutkiewicz and Rafał Januszewski and Monika Rzonsowska and Beata Dudziec and Marek Nowicki and Maciej Kubicki},
doi = {10.1039/d2qi02161g},
year = {2023},
date = {2023-11-10},
urldate = {2023-11-10},
journal = {Inorganic Chemistry Frontiers},
volume = {10},
issue = {3},
pages = {888 - 899},
abstract = {Despite the rapid progress in the research on the synthesis of linear macromolecular systems with double-decker SQs included in the co-polymer chain, based on diverse catalytic processes, it still has limitations because of the formation of co-oligomers up to 20 units in a chain. Herein, we present a distinct look at known hydrosilylation reactions for forming hybrid copolymers. It is used as a synthetic protocol to synthesize DDSQ-based linear A–B alternating macromolecular systems and this is the first report on the formation of co-polymers with DDSQ with DPn over 1000. Additionally, this distinct insight concerns studies on the impact of Si–H and Si–Vi reactive group placement in DDSQ or in a respective co-reagent on the molecular weight distributions, degree of polymerization of the resulting copolymers as well as their selected physicochemical properties, i.e. thermal, mechanical, and hydrophobic properties. Understanding the basics of the catalytic processes leading to co-polymer SQ-based systems will pave the way for their use in the formation of hybrid materials of desired properties and respective applications.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Despite the rapid progress in the research on the synthesis of linear macromolecular systems with double-decker SQs included in the co-polymer chain, based on diverse catalytic processes, it still has limitations because of the formation of co-oligomers up to 20 units in a chain. Herein, we present a distinct look at known hydrosilylation reactions for forming hybrid copolymers. It is used as a synthetic protocol to synthesize DDSQ-based linear A–B alternating macromolecular systems and this is the first report on the formation of co-polymers with DDSQ with DPn over 1000. Additionally, this distinct insight concerns studies on the impact of Si–H and Si–Vi reactive group placement in DDSQ or in a respective co-reagent on the molecular weight distributions, degree of polymerization of the resulting copolymers as well as their selected physicochemical properties, i.e. thermal, mechanical, and hydrophobic properties. Understanding the basics of the catalytic processes leading to co-polymer SQ-based systems will pave the way for their use in the formation of hybrid materials of desired properties and respective applications.
28.
Reddig, Wiktoria; Przychodnia, Marta; Ciuk, Tymoteusz; El-Ahmar, Semir
IEEE SENSORS 2023, Vienna, October 29 - November 2, 2023, (Oral presentation).
@conference{IEEESENSORS2023WR,
title = {High-Temperature Stability of Sensor Platforms Designed to Detect Magnetic Fields in a Harmful Radiation Environment},
author = {Wiktoria Reddig and Marta Przychodnia and Tymoteusz Ciuk and Semir El-Ahmar},
url = {https://ieeexplore.ieee.org/document/10189897},
year = {2023},
date = {2023-10-31},
booktitle = {IEEE SENSORS 2023},
address = {Vienna, October 29 - November 2},
abstract = {Modern 2-D carbon materials are being increasingly studied as potential magnetic field sensors for use in environments with harmful radiation, such as neutron radiation present in future fusion reactors. Potential radiation resistance is also demonstrated by classical semiconductor thin-film materials, after appropriate doping. A necessary condition for the potential neutron-resistant sensor is high-temperature stability. In this letter, we bring together two leading high-temperature sensing platforms: graphene-based and Sn-doped InSb-based. Our study focuses on their thermal stability under identical high-temperature and time conditions. We utilized long-term annealing procedures combined with the simultaneous measurement of the Hall effect to reflect both, the temperature conditions during radiation tests of these platforms performed recently in the MARIA research nuclear reactor, as well as postradiation temperature treatment. We showed that long-term annealing at fixed temperature can affect the graphene-based platform to a greater extent; however, variable temperature tests showed better stability of this system. The InSb-based platform, on the other hand, exhibits much better temperature stability when operating up to 200 °C.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020},
note = {Oral presentation},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
Modern 2-D carbon materials are being increasingly studied as potential magnetic field sensors for use in environments with harmful radiation, such as neutron radiation present in future fusion reactors. Potential radiation resistance is also demonstrated by classical semiconductor thin-film materials, after appropriate doping. A necessary condition for the potential neutron-resistant sensor is high-temperature stability. In this letter, we bring together two leading high-temperature sensing platforms: graphene-based and Sn-doped InSb-based. Our study focuses on their thermal stability under identical high-temperature and time conditions. We utilized long-term annealing procedures combined with the simultaneous measurement of the Hall effect to reflect both, the temperature conditions during radiation tests of these platforms performed recently in the MARIA research nuclear reactor, as well as postradiation temperature treatment. We showed that long-term annealing at fixed temperature can affect the graphene-based platform to a greater extent; however, variable temperature tests showed better stability of this system. The InSb-based platform, on the other hand, exhibits much better temperature stability when operating up to 200 °C.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
29.
El-Ahmar, Semir; Jankowski, Jakub; Czaja, Paweł; Reddig, Wiktoria; Przychodnia, Marta; Raczyński, Jan; Koczorowski, Wojciech
Magnetic Field Sensor Operating From Cryogenics to Elevated Temperatures Conference
IEEE SENSORS 2023, Vienna, October 29 - November 2, 2023, (Oral presentation).
@conference{IEEESENSORS2023SA,
title = {Magnetic Field Sensor Operating From Cryogenics to Elevated Temperatures},
author = {Semir El-Ahmar and Jakub Jankowski and Paweł Czaja and Wiktoria Reddig and Marta Przychodnia and Jan Raczyński and Wojciech Koczorowski},
url = {https://ieeexplore.ieee.org/document/10180063},
year = {2023},
date = {2023-10-31},
booktitle = {IEEE SENSORS 2023},
address = {Vienna, October 29 - November 2},
abstract = {Magnetic field sensors, based on the Hall effect, in mass production currently have a standard operating temperature limit of 150 °C. There are sensors designed for specific purposes that can function within a limited range of up to 225 °C or even at the temperature of liquid nitrogen or liquid helium. The technology for the production of magnetic field sensors enabling operation in industrial conditions at temperatures significantly exceeding 225 °C or in the full range of temperatures from cryogenics to elevated temperatures (reaching 350 °C) has not yet been developed. In this letter, we present a reliable and high-quality magnetic field sensor that is capable of functioning under a wide range of temperatures. The sensor was developed using mainly the academic infrastructure of the Poznan University of Technology and can be suitable for industrial use.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020},
note = {Oral presentation},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
Magnetic field sensors, based on the Hall effect, in mass production currently have a standard operating temperature limit of 150 °C. There are sensors designed for specific purposes that can function within a limited range of up to 225 °C or even at the temperature of liquid nitrogen or liquid helium. The technology for the production of magnetic field sensors enabling operation in industrial conditions at temperatures significantly exceeding 225 °C or in the full range of temperatures from cryogenics to elevated temperatures (reaching 350 °C) has not yet been developed. In this letter, we present a reliable and high-quality magnetic field sensor that is capable of functioning under a wide range of temperatures. The sensor was developed using mainly the academic infrastructure of the Poznan University of Technology and can be suitable for industrial use.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
30.
Mrzygłód, Aleksandra; Armada, M. Pilar Garcia; Rzonsowska, Monika; Dudziec, Beata; Nowicki, Marek
Metallodendrimers Unveiled: Investigating the Formation and Features of Double-Decker Silsesquioxane-Based Silylferrocene Dendrimers Journal Article
In: Inorganic Chemistry, vol. 62, iss. 41, pp. 16932−16942, 2023.
@article{mrzyglod2023,
title = {Metallodendrimers Unveiled: Investigating the Formation and Features of Double-Decker Silsesquioxane-Based Silylferrocene Dendrimers},
author = {Aleksandra Mrzygłód and M. Pilar Garcia Armada and Monika Rzonsowska and Beata Dudziec and Marek Nowicki},
doi = {10.1021/acs.inorgchem.3c02628},
year = {2023},
date = {2023-09-29},
urldate = {2023-09-29},
journal = {Inorganic Chemistry},
volume = {62},
issue = {41},
pages = {16932−16942},
abstract = {Dendrimers exhibiting reversible redox properties have attracted extensive attention for their potential as electron transfer mediators, catalysts, and molecular sensors. In this study, we introduce intriguing G1 and G2 dendrimers featuring double-decker silsesquioxane cores and silylferrocene moieties. Through a carefully orchestrated sequence of condensation, reduction, and hydrosilylation reactions, these compounds were synthesized and comprehensively characterized spectroscopically and spectrometrically. Our investigation also encompassed the examination of their properties, including thermal stability, solubility in common organic solvents, and electrochemical behavior. We determined that these dendrimers possess the capability to form monolayers on platinum electrodes, which we conclusively demonstrated through the probing of cyclic voltammetry, electrochemical impedance spectroscopy, and scanning electron microscopy imaging. Notably, this study marks the first-ever example of modifying doubledecker silsesquioxane cores with ferrocene groups while simultaneously representing one of the scarce instances of dendrimers
exhibiting an open double-decker silsesquioxane core.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Dendrimers exhibiting reversible redox properties have attracted extensive attention for their potential as electron transfer mediators, catalysts, and molecular sensors. In this study, we introduce intriguing G1 and G2 dendrimers featuring double-decker silsesquioxane cores and silylferrocene moieties. Through a carefully orchestrated sequence of condensation, reduction, and hydrosilylation reactions, these compounds were synthesized and comprehensively characterized spectroscopically and spectrometrically. Our investigation also encompassed the examination of their properties, including thermal stability, solubility in common organic solvents, and electrochemical behavior. We determined that these dendrimers possess the capability to form monolayers on platinum electrodes, which we conclusively demonstrated through the probing of cyclic voltammetry, electrochemical impedance spectroscopy, and scanning electron microscopy imaging. Notably, this study marks the first-ever example of modifying doubledecker silsesquioxane cores with ferrocene groups while simultaneously representing one of the scarce instances of dendrimers
exhibiting an open double-decker silsesquioxane core.
exhibiting an open double-decker silsesquioxane core.
31.
El-Ahmar, Semir; Czaja, Paweł; Reddig, Wiktoria; Przychodnia, Marta; Raczyński, Jan; Koczorowski, Wojciech
European Conference on Surface Science (ECOSS 36), Lodz, August 28 - September 1, 2023, (Oral presentation).
@conference{ECOSS2023SA,
title = {Two-dimensional and thin-film active layers for magnetic field detection in extreme temperature range},
author = {Semir El-Ahmar and Paweł Czaja and Wiktoria Reddig and Marta Przychodnia and Jan Raczyński and Wojciech Koczorowski},
url = {https://nano.put.poznan.pl/wp-content/uploads/2023/09/abstract_SA.pdf},
year = {2023},
date = {2023-08-31},
booktitle = {European Conference on Surface Science (ECOSS 36)},
address = {Lodz, August 28 - September 1},
abstract = {Detecting magnetic fields can serve as a means of measuring various quantities like position, movement, direction, and rotational speed. This makes magnetic field detection devices highly useful in many industries. Today, electronics that can function dependably in harsh environments are in high demand, including those that can withstand extreme temperatures. Traditional electronics design often requires active or passive cooling, but this may not always be practical or effective. As a result, there is a growing need for extreme environment electronics, particularly in the automotive, space, defense, and energy industries [1]. Our research explores the potential of utilizing modern two-dimensional material, epitaxial graphene on SiC [2] and classic semiconductor thin-film material (n-InSb) [3] as active layers for sensor structures that can measure magnetic fields from cryogenic temperatures up to 350 °C. Using the developed procedures for temperature testing of the manufactured systems, with simultaneous, cyclical measurement of the Hall effect, we can assess the temperature resistance of the tested systems both
in terms of thermal and long-term stability. The conducted research on the active layer and the structure of the sensor is supplemented with temperature tests of the construction materials of the housing of the future device.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020},
note = {Oral presentation},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
Detecting magnetic fields can serve as a means of measuring various quantities like position, movement, direction, and rotational speed. This makes magnetic field detection devices highly useful in many industries. Today, electronics that can function dependably in harsh environments are in high demand, including those that can withstand extreme temperatures. Traditional electronics design often requires active or passive cooling, but this may not always be practical or effective. As a result, there is a growing need for extreme environment electronics, particularly in the automotive, space, defense, and energy industries [1]. Our research explores the potential of utilizing modern two-dimensional material, epitaxial graphene on SiC [2] and classic semiconductor thin-film material (n-InSb) [3] as active layers for sensor structures that can measure magnetic fields from cryogenic temperatures up to 350 °C. Using the developed procedures for temperature testing of the manufactured systems, with simultaneous, cyclical measurement of the Hall effect, we can assess the temperature resistance of the tested systems both
in terms of thermal and long-term stability. The conducted research on the active layer and the structure of the sensor is supplemented with temperature tests of the construction materials of the housing of the future device.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
in terms of thermal and long-term stability. The conducted research on the active layer and the structure of the sensor is supplemented with temperature tests of the construction materials of the housing of the future device.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
32.
Grzela, Tomasz; Bazarnik, Maciej
On-surface metalation of salophene molecules with Dy on Au(111) substrate Conference
European Conference on Surface Science (ECOSS 36), Lodz, August 28 - September 1, 2023, (Oral presentation).
@conference{ECOSS2023TG,
title = {On-surface metalation of salophene molecules with Dy on Au(111) substrate},
author = {Tomasz Grzela and Maciej Bazarnik},
url = {https://nano.put.poznan.pl/wp-content/uploads/2023/09/abstract_TG.pdf},
year = {2023},
date = {2023-08-30},
booktitle = {European Conference on Surface Science (ECOSS 36)},
address = {Lodz, August 28 - September 1},
abstract = {In recent years, metal-organic complexes have garnered much interest as an active area of research as a result of their enormous potential application in, e.g.: high-efficiency organic light-emitting devices, solar cells, photodetectors, or in electrocatalysis [1,2]. Metal-organic complexes are also a promising pathway for microelectronic miniaturization and open up new possibilities in the development of spintronics [3-5]. Since not all complexes are stable in air, in situ on-surface metalation is an attractive alternative to wet chemistry. On-surface metalation of 5,5′-dibromosalophene with 3d transition metals (Co, Fe and Cr) on Cointercalated graphene grown on Ir (111) was shown to be a promising pathway to vary magnetic and electronic properties of metal−organic complexes [6]. Moreover, on-surface metalation gives clean samples of various different metal−organic complexes, without any pollution or contaminations. Within this contribution, we present results focused on in situ under UHV conditions, the on-surface metalation process of 5,5’-dibromosalophene with dysprosium. The metalation is realized in a twostep process deposition of the rare-earth metal atoms on sample kept at room temperature, followed by postprocessing annealing at elevated temperatures. The morphology and electronic structure of the obtained salophene complexes were investigated by using a combination of scanning tunneling
microscopy and spectroscop.},
note = {Oral presentation},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
In recent years, metal-organic complexes have garnered much interest as an active area of research as a result of their enormous potential application in, e.g.: high-efficiency organic light-emitting devices, solar cells, photodetectors, or in electrocatalysis [1,2]. Metal-organic complexes are also a promising pathway for microelectronic miniaturization and open up new possibilities in the development of spintronics [3-5]. Since not all complexes are stable in air, in situ on-surface metalation is an attractive alternative to wet chemistry. On-surface metalation of 5,5′-dibromosalophene with 3d transition metals (Co, Fe and Cr) on Cointercalated graphene grown on Ir (111) was shown to be a promising pathway to vary magnetic and electronic properties of metal−organic complexes [6]. Moreover, on-surface metalation gives clean samples of various different metal−organic complexes, without any pollution or contaminations. Within this contribution, we present results focused on in situ under UHV conditions, the on-surface metalation process of 5,5’-dibromosalophene with dysprosium. The metalation is realized in a twostep process deposition of the rare-earth metal atoms on sample kept at room temperature, followed by postprocessing annealing at elevated temperatures. The morphology and electronic structure of the obtained salophene complexes were investigated by using a combination of scanning tunneling
microscopy and spectroscop.
microscopy and spectroscop.
33.
Reddig, Wiktoria; El-Ahmar, Semir; Ciuk, Tymoteusz; Prokopowicz, Rafał
European Conference on Surface Science (ECOSS 36), Lodz, August 28 - September 1, 2023, (Oral presentation).
@conference{ECOSS2023WR,
title = {Exploring possible modes of damage caused by neutron radiation in thin-film and two-dimensional Hall-effect systems},
author = {Wiktoria Reddig and Semir El-Ahmar and Tymoteusz Ciuk and Rafał Prokopowicz},
url = {https://nano.put.poznan.pl/wp-content/uploads/2023/09/abstract_WR.pdf},
year = {2023},
date = {2023-08-29},
urldate = {2023-08-29},
booktitle = {European Conference on Surface Science (ECOSS 36)},
address = {Lodz, August 28 - September 1},
abstract = {We describe the potential use of two-dimensional carbon-based structures and semiconductor thinfilm materials in the energy industry as magnetic field detectors capable of operating under extreme conditions. In magnetic-confinement fusion reactors, electronics will be exposed to high temperatures and radiation damage. Our work demonstrates the experimental study on the impact of neutron irradiation and determining its influence on the electrical parameters of semiconductor thinfilm and two-dimensional systems. For this purpose, we fabricated a 2D-material in form of hydrogenintercalated quasi-free-standing graphene on semi-insulating 4H-SiC (0001), passivated with an Al2O3 layer [1]. The other structure was prepared in the form of donor-doped InSb-based thin-film on a semiinsulating GaAs substrate [2]. The tested systems were exposed to fast neutron fluence of 7×1017 cm-2 using the MARIA research nuclear reactor. For graphene-based structure after irradiation, we theorize that the main factor affecting the electrical parameters is the loss of atoms in the hydrogen layer, based on Hall effect measurements and microRaman characterization. We have predicted, with the use of density functional theory calculations, that damage to the intercalation lowers carrier concentration in graphene. We anticipate that temperatures above 200°C will facilitate diffusion of the hydrogen atoms from parts with higher to lower concentration. This effect can reduce the surface area where intercalation is too low to support the separation of the graphene [3]. Understanding the mechanism of damaging the tested systems by neutron radiation is a key milestone in assessing its suitability for magnetic field detection in harsh environment.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020},
note = {Oral presentation},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
We describe the potential use of two-dimensional carbon-based structures and semiconductor thinfilm materials in the energy industry as magnetic field detectors capable of operating under extreme conditions. In magnetic-confinement fusion reactors, electronics will be exposed to high temperatures and radiation damage. Our work demonstrates the experimental study on the impact of neutron irradiation and determining its influence on the electrical parameters of semiconductor thinfilm and two-dimensional systems. For this purpose, we fabricated a 2D-material in form of hydrogenintercalated quasi-free-standing graphene on semi-insulating 4H-SiC (0001), passivated with an Al2O3 layer [1]. The other structure was prepared in the form of donor-doped InSb-based thin-film on a semiinsulating GaAs substrate [2]. The tested systems were exposed to fast neutron fluence of 7×1017 cm-2 using the MARIA research nuclear reactor. For graphene-based structure after irradiation, we theorize that the main factor affecting the electrical parameters is the loss of atoms in the hydrogen layer, based on Hall effect measurements and microRaman characterization. We have predicted, with the use of density functional theory calculations, that damage to the intercalation lowers carrier concentration in graphene. We anticipate that temperatures above 200°C will facilitate diffusion of the hydrogen atoms from parts with higher to lower concentration. This effect can reduce the surface area where intercalation is too low to support the separation of the graphene [3]. Understanding the mechanism of damaging the tested systems by neutron radiation is a key milestone in assessing its suitability for magnetic field detection in harsh environment.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
34.
Przychodnia, Marta; Hermanowicz, Michał; Grzela, Tomasz; Gargiani, P; Wiesendanger, Roland; Bazarnik, Maciej
Comprehensive studies of Gd-Pt surface alloys grown on Pt(111) Conference
European Conference on Surface Science (ECOSS 36), Lodz, August 28 - September 1, 2023, (Oral presentation).
@conference{ECOSS2023MP,
title = {Comprehensive studies of Gd-Pt surface alloys grown on Pt(111)},
author = {Marta Przychodnia and Michał Hermanowicz and Tomasz Grzela and P Gargiani and Roland Wiesendanger and Maciej Bazarnik},
url = {https://nano.put.poznan.pl/wp-content/uploads/2023/09/abstract_MP.pdf},
year = {2023},
date = {2023-08-29},
booktitle = {European Conference on Surface Science (ECOSS 36)},
address = {Lodz, August 28 - September 1},
abstract = {Intermetallic compounds consisting of rare earth (RE) metals in combination with noble metals (NM)
are a class of materials with specific properties that promise a wide range of potential applications.
Here, the magnetic properties are defined by indirect interactions between RE atoms via the NM
lattice. Limiting the dimensionality of such a system to 2D (so-called surface alloys) changes the nature of indirect coupling, for example, a GdAu2 surface alloy is ferromagnetic while in bulk this alloy is antiferromagnetic [1]. Recently we showed the formation of three different Gd-Pt surface alloys as a function of growth temperature and Gd coverage on Pt(111) substrate [2]. In this presentation, we give a summary of the structural composition and the electronic properties of the surface alloys, disclosed by a combination of scanning tunneling microscopy and spectroscopy (STM/S) and density functional theory (DFT) calculations. Our analysis will focus on the magnetic properties of the investigated systems probed using XMCD method.},
note = {Oral presentation},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
Intermetallic compounds consisting of rare earth (RE) metals in combination with noble metals (NM)
are a class of materials with specific properties that promise a wide range of potential applications.
Here, the magnetic properties are defined by indirect interactions between RE atoms via the NM
lattice. Limiting the dimensionality of such a system to 2D (so-called surface alloys) changes the nature of indirect coupling, for example, a GdAu2 surface alloy is ferromagnetic while in bulk this alloy is antiferromagnetic [1]. Recently we showed the formation of three different Gd-Pt surface alloys as a function of growth temperature and Gd coverage on Pt(111) substrate [2]. In this presentation, we give a summary of the structural composition and the electronic properties of the surface alloys, disclosed by a combination of scanning tunneling microscopy and spectroscopy (STM/S) and density functional theory (DFT) calculations. Our analysis will focus on the magnetic properties of the investigated systems probed using XMCD method.
are a class of materials with specific properties that promise a wide range of potential applications.
Here, the magnetic properties are defined by indirect interactions between RE atoms via the NM
lattice. Limiting the dimensionality of such a system to 2D (so-called surface alloys) changes the nature of indirect coupling, for example, a GdAu2 surface alloy is ferromagnetic while in bulk this alloy is antiferromagnetic [1]. Recently we showed the formation of three different Gd-Pt surface alloys as a function of growth temperature and Gd coverage on Pt(111) substrate [2]. In this presentation, we give a summary of the structural composition and the electronic properties of the surface alloys, disclosed by a combination of scanning tunneling microscopy and spectroscopy (STM/S) and density functional theory (DFT) calculations. Our analysis will focus on the magnetic properties of the investigated systems probed using XMCD method.
35.
Koczorowski, Wojciech; Raczyński, Jan; El-Ahmar, Semir; Nowicki, Marek; Szybowicz, Mirosław; Czajka, Ryszard
Processing of PtSe2 ultra-thin layers using Ar plasma Journal Article
In: Materials Science in Semiconductor Processing, vol. 167, pp. 107814, 2023.
@article{Koczorowski2023,
title = {Processing of PtSe2 ultra-thin layers using Ar plasma},
author = {Wojciech Koczorowski and Jan Raczyński and Semir El-Ahmar and Marek Nowicki and Mirosław Szybowicz and Ryszard Czajka},
doi = {10.1016/j.mssp.2023.107814},
year = {2023},
date = {2023-08-28},
urldate = {2023-08-28},
journal = {Materials Science in Semiconductor Processing},
volume = {167},
pages = {107814},
abstract = {This paper contains a detailed analysis of the Ar plasma treatment dynamics of the PtSe2/Al2O3 system comprising ultrathin PtSe2 layers with a thickness of 1–3 monomolecular layers. The impact of the etching process on the physical properties of the ultrathin PtSe2 layers was analysed using Raman spectroscopy and atomic force microscopy techniques in time intervals up to the complete decomposition of the PtSe2 layers. The processing duration that allowed the complete removal of the PtSe2 layer was determined for the investigated systems. The results, in combination with the optimised photolithography, were used for the active PtSe2 channel formation in the 3 ML PtSe2-based transfer line measurement structure using electrodes consisting of Ni and Au layers (with thicknesses of 20 and 40 nm, respectively). The electrical properties of the fabricated system confirm the effectiveness of commercially available PtSe2/Al2O3 samples in the fabrication of simple electronic devices utilising planar architecture, i.e. micro- and nanosensors.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Science Center (Poland), Project No. 2019/35/O/ST5/01940},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
This paper contains a detailed analysis of the Ar plasma treatment dynamics of the PtSe2/Al2O3 system comprising ultrathin PtSe2 layers with a thickness of 1–3 monomolecular layers. The impact of the etching process on the physical properties of the ultrathin PtSe2 layers was analysed using Raman spectroscopy and atomic force microscopy techniques in time intervals up to the complete decomposition of the PtSe2 layers. The processing duration that allowed the complete removal of the PtSe2 layer was determined for the investigated systems. The results, in combination with the optimised photolithography, were used for the active PtSe2 channel formation in the 3 ML PtSe2-based transfer line measurement structure using electrodes consisting of Ni and Au layers (with thicknesses of 20 and 40 nm, respectively). The electrical properties of the fabricated system confirm the effectiveness of commercially available PtSe2/Al2O3 samples in the fabrication of simple electronic devices utilising planar architecture, i.e. micro- and nanosensors.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Science Center (Poland), Project No. 2019/35/O/ST5/01940
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Science Center (Poland), Project No. 2019/35/O/ST5/01940
36.
Raczyński, Jan; Costina, I; Spirito, D; Koczorowski, Wojciech
Properties of the metal/PtSe2 thin layer interfaces Conference
European Conference on Surface Science (ECOSS 36), Lodz, August 28 - September 1, 2023, (Oral presentation).
@conference{ECOSS2023JR,
title = {Properties of the metal/PtSe2 thin layer interfaces},
author = {Jan Raczyński and I Costina and D Spirito and Wojciech Koczorowski},
url = {https://nano.put.poznan.pl/wp-content/uploads/2023/09/abstract_JR.pdf},
year = {2023},
date = {2023-08-28},
booktitle = {European Conference on Surface Science (ECOSS 36)},
address = {Lodz, August 28 - September 1},
abstract = {The discovery of graphene and its physical properties started a new era in the investigation of thin layer materials. Nowadays, these types of materials also include Transition Metal Dichalcogenides (TMD), which provide a wide range of physical properties, such as the values of the charge carrier mobility and bandgap energy, which depend on the layer thickness. One of the most promising TMD materials is PtSe2, which exhibits a chemically non-reactive surface, it is crucial to determine the properties of the interfaces formed at the metal/PtSe2 junction. Different metals will form morphologically different structures on the PtSe2 active surface, which requires a comprehensive analysis of both the morphology and physicochemical properties with analysis of the thermal stability of such systems. For this purpose, several measurement methods will be used, ranging from Atomic Force Microscopy (AFM), to Raman and X-Ray Photoelectron Spectroscopy (RS, XPS). In this presentation, the properties of the metallic layers (eg.Ni,Pd,Ti) with thicknesses between 10-20nm embedded on surface of the bulk crystal PtSe2 will be discussed. Particular emphasis will be placed on mutual interactions in the interfaces obtained in this way, and also include the effect of thermal treatment on the formation of bonds between the layers observed in both the form of vibration modes in RS and the chemical shift in XPS measurements. In each of the systems and temperature discussed, the surface morphology was also analysed using AFM to determine its changes. The observed differences between different types of metals and the PtSe2 layer indicate different properties of such structures, which translate into the operation of sensor devices based on planar architecture. Particularly crucial here is the increase in the surface roughness of the interface, which translates into an improved contact of the interface and the appearance of chemical interactions between PtSe2 and the metallic layer.
Funding from the National Science Centre (Poland), Project Preludium bis No. 2019/35/O/ST5/01940
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2220
Funding from the National Agency for Academic Exchange (Poland), Project No. PPN/STA/2021/1/00043},
note = {Oral presentation},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
The discovery of graphene and its physical properties started a new era in the investigation of thin layer materials. Nowadays, these types of materials also include Transition Metal Dichalcogenides (TMD), which provide a wide range of physical properties, such as the values of the charge carrier mobility and bandgap energy, which depend on the layer thickness. One of the most promising TMD materials is PtSe2, which exhibits a chemically non-reactive surface, it is crucial to determine the properties of the interfaces formed at the metal/PtSe2 junction. Different metals will form morphologically different structures on the PtSe2 active surface, which requires a comprehensive analysis of both the morphology and physicochemical properties with analysis of the thermal stability of such systems. For this purpose, several measurement methods will be used, ranging from Atomic Force Microscopy (AFM), to Raman and X-Ray Photoelectron Spectroscopy (RS, XPS). In this presentation, the properties of the metallic layers (eg.Ni,Pd,Ti) with thicknesses between 10-20nm embedded on surface of the bulk crystal PtSe2 will be discussed. Particular emphasis will be placed on mutual interactions in the interfaces obtained in this way, and also include the effect of thermal treatment on the formation of bonds between the layers observed in both the form of vibration modes in RS and the chemical shift in XPS measurements. In each of the systems and temperature discussed, the surface morphology was also analysed using AFM to determine its changes. The observed differences between different types of metals and the PtSe2 layer indicate different properties of such structures, which translate into the operation of sensor devices based on planar architecture. Particularly crucial here is the increase in the surface roughness of the interface, which translates into an improved contact of the interface and the appearance of chemical interactions between PtSe2 and the metallic layer.
Funding from the National Science Centre (Poland), Project Preludium bis No. 2019/35/O/ST5/01940
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2220
Funding from the National Agency for Academic Exchange (Poland), Project No. PPN/STA/2021/1/00043
Funding from the National Science Centre (Poland), Project Preludium bis No. 2019/35/O/ST5/01940
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2220
Funding from the National Agency for Academic Exchange (Poland), Project No. PPN/STA/2021/1/00043
37.
Kwiecień, Katarzyna; Raczyński, Jan; Nowak, Ewelina; Weiss, Marek; Szybowicz, Mirosław; Koczorowski, Wojciech
Morphology and electric properties of oxidized HfSe2 surface Conference
European Conference on Surface Science (ECOSS 36), Lodz, August 28 - September 1, 2023, (Poster presentation).
@conference{ECOSS2023KK,
title = {Morphology and electric properties of oxidized HfSe2 surface},
author = {Katarzyna Kwiecień and Jan Raczyński and Ewelina Nowak and Marek Weiss and Mirosław Szybowicz and Wojciech Koczorowski },
url = {https://nano.put.poznan.pl/wp-content/uploads/2023/09/abstract_KK.pdf},
year = {2023},
date = {2023-08-28},
booktitle = {European Conference on Surface Science (ECOSS 36)},
address = {Lodz, August 28 - September 1},
abstract = {HfSe2 is a layered material belonging to Transition Metal Dichalcogenides (TMDs) with a bandgap equal to 0.9 eV and 1.2 eV for bulk crystal and monolayer respectively [1]. It has one of the highest theoretically predicted carrier mobility µ (3500 cm2/Vs) among TMDs, however the experimentally measured values of µ are three orders of magnitude lower [1–4]. Such discrepancy arises from high contact resistance between HfSe2 and measurement electrode, which ranges from 50 to 100 kΩ · µm-1 [1]. HfSe2 oxidizes under ambient conditions, which can drastically modify the potential barrier of metal/HfSe2 interface, which in turn, can influence their contact resistance. Moreover, the morphology of HfxOy could affect the effectiveness of the metal electrode contact to HfxOy/HfSe2. The first part of this work is focused on the oxidation dynamics of HfSe2 and the impact of oxidation parameters on the morphology of HfyOx which forms on its surface. The time progression of HfxOy growth was obtained in a quasi-controlled environment. The dependence of its morphology (surface roughness, the size of oxide structures) on the growth parameters has also been investigated using SPM and SEM techniques. The second part of this work concentrates on the procedure of fabricating devices with HfSe2 active layer. Preliminary I/V measurements obtained for this type of device proved that the resistance of the HfyOx/HfSe2 structure decreased with increasing its exposure time to the ambient conditions. Additionally, an effective method of preventing the oxidation of HfSe2 has been proposed and evaluated using Raman Spectroscopy.
by the Ministry of Education and Science (Poland) Project No: 0612/SBAD/6215},
note = {Poster presentation},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
HfSe2 is a layered material belonging to Transition Metal Dichalcogenides (TMDs) with a bandgap equal to 0.9 eV and 1.2 eV for bulk crystal and monolayer respectively [1]. It has one of the highest theoretically predicted carrier mobility µ (3500 cm2/Vs) among TMDs, however the experimentally measured values of µ are three orders of magnitude lower [1–4]. Such discrepancy arises from high contact resistance between HfSe2 and measurement electrode, which ranges from 50 to 100 kΩ · µm-1 [1]. HfSe2 oxidizes under ambient conditions, which can drastically modify the potential barrier of metal/HfSe2 interface, which in turn, can influence their contact resistance. Moreover, the morphology of HfxOy could affect the effectiveness of the metal electrode contact to HfxOy/HfSe2. The first part of this work is focused on the oxidation dynamics of HfSe2 and the impact of oxidation parameters on the morphology of HfyOx which forms on its surface. The time progression of HfxOy growth was obtained in a quasi-controlled environment. The dependence of its morphology (surface roughness, the size of oxide structures) on the growth parameters has also been investigated using SPM and SEM techniques. The second part of this work concentrates on the procedure of fabricating devices with HfSe2 active layer. Preliminary I/V measurements obtained for this type of device proved that the resistance of the HfyOx/HfSe2 structure decreased with increasing its exposure time to the ambient conditions. Additionally, an effective method of preventing the oxidation of HfSe2 has been proposed and evaluated using Raman Spectroscopy.
by the Ministry of Education and Science (Poland) Project No: 0612/SBAD/6215
by the Ministry of Education and Science (Poland) Project No: 0612/SBAD/6215
38.
Goedecke, Julia J.; Bazarnik, Maciej; Wiesendanger, Roland
STM study of Nb(111) prepared by different methods Journal Article
In: Physical Review Materials, vol. 7, pp. 084803, 2023.
@article{Goedecke2023,
title = {STM study of Nb(111) prepared by different methods},
author = {Julia J. Goedecke and Maciej Bazarnik and Roland Wiesendanger},
doi = {10.1103/PhysRevMaterials.7.084803},
year = {2023},
date = {2023-08-25},
urldate = {2023-08-25},
journal = {Physical Review Materials},
volume = {7},
pages = {084803},
abstract = {Niobium with its highest transition temperature among all elemental superconductors has become a favorable substrate for realizing well-defined low-dimensional magnet-superconductor hybrid systems exhibiting novel types of exotic electronic states such as Majorana zero-energy modes. While a preparation procedure for obtaining atomically clean Nb(110) substrates has previously been reported, a suitable preparation method for clean Nb(111) surfaces is still lacking. Here, we report a recipe for cleaning Nb(111) surfaces based on an atomic hydrogen treatment followed by short flashes to elevated temperatures. The atomic surface structure of clean nonreconstructed Nb(111) is investigated by high-resolution scanning tunneling microscopy, as well as a surface reconstruction with a reduced atom density compared to the (111) plane of a bcc crystal resulting from a surface premelting at high annealing temperatures.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2220
Funding from the National Science Center (Poland), Project No. 2017/26/E/ST3/00140},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Niobium with its highest transition temperature among all elemental superconductors has become a favorable substrate for realizing well-defined low-dimensional magnet-superconductor hybrid systems exhibiting novel types of exotic electronic states such as Majorana zero-energy modes. While a preparation procedure for obtaining atomically clean Nb(110) substrates has previously been reported, a suitable preparation method for clean Nb(111) surfaces is still lacking. Here, we report a recipe for cleaning Nb(111) surfaces based on an atomic hydrogen treatment followed by short flashes to elevated temperatures. The atomic surface structure of clean nonreconstructed Nb(111) is investigated by high-resolution scanning tunneling microscopy, as well as a surface reconstruction with a reduced atom density compared to the (111) plane of a bcc crystal resulting from a surface premelting at high annealing temperatures.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2220
Funding from the National Science Center (Poland), Project No. 2017/26/E/ST3/00140
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2220
Funding from the National Science Center (Poland), Project No. 2017/26/E/ST3/00140
39.
Reddig, Wiktoria; Przychodnia, Marta; Ciuk, Tymoteusz; El-Ahmar, Semir
High-temperature Stability of Sensor Platforms Designed to Detect Magnetic Fields in A Harmful Radiation Environment Journal Article
In: IEEE Sensors Letters, vol. 7, iss. 8, pp. 1-4, 2023.
@article{Reddig2023,
title = {High-temperature Stability of Sensor Platforms Designed to Detect Magnetic Fields in A Harmful Radiation Environment},
author = {Wiktoria Reddig and Marta Przychodnia and Tymoteusz Ciuk and Semir El-Ahmar},
doi = {10.1109/LSENS.2023.3297795},
year = {2023},
date = {2023-08-03},
urldate = {2023-08-03},
journal = {IEEE Sensors Letters},
volume = {7},
issue = {8},
pages = {1-4},
abstract = {Modern two-dimensional carbon materials are being increasingly studied as potential magnetic field sensors for use in environments with harmful radiation, such as neutron radiation present in future fusion reactors. Potential radiation resistance is also demonstrated by classical semiconductor thin-film materials, after appropriate doping. A necessary condition for the potential neutron-resistant sensor is high-temperature stability. In this letter, we bring together two leading high-temperature sensing platforms: graphene-based and Sn-doped InSb-based. Our study focuses on their thermal stability under identical high-temperature and time conditions. We utilized long-term annealing procedures combined with the simultaneous measurement of the Hall effect to reflect both, the temperature conditions during radiation tests of these platforms performed recently in the MARIA research nuclear reactor, as well as post-radiation temperature treatment. We showed that long-term annealing at fixed temperature can affect the graphene-based platform to a greater extent, however, variable temperature tests showed better stability of this system. The InSb-based platform, on the other hand, exhibits much better temperature stability when operating up to 200°C.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Modern two-dimensional carbon materials are being increasingly studied as potential magnetic field sensors for use in environments with harmful radiation, such as neutron radiation present in future fusion reactors. Potential radiation resistance is also demonstrated by classical semiconductor thin-film materials, after appropriate doping. A necessary condition for the potential neutron-resistant sensor is high-temperature stability. In this letter, we bring together two leading high-temperature sensing platforms: graphene-based and Sn-doped InSb-based. Our study focuses on their thermal stability under identical high-temperature and time conditions. We utilized long-term annealing procedures combined with the simultaneous measurement of the Hall effect to reflect both, the temperature conditions during radiation tests of these platforms performed recently in the MARIA research nuclear reactor, as well as post-radiation temperature treatment. We showed that long-term annealing at fixed temperature can affect the graphene-based platform to a greater extent, however, variable temperature tests showed better stability of this system. The InSb-based platform, on the other hand, exhibits much better temperature stability when operating up to 200°C.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
40.
Rzelewska-Piekut, Martyna; Wolańczyk, Zuzanna; Nowicki, Marek; Regel-Rosocka, Magdalena
Precipitation of Pt, Pd, Rh, and Ru Nanoparticles with Non-Precious Metals from Model and Real Multicomponent Solutions Journal Article
In: Molecules, vol. 28, iss. 13, pp. 5188, 2023.
@article{Piekut2023,
title = {Precipitation of Pt, Pd, Rh, and Ru Nanoparticles with Non-Precious Metals from Model and Real Multicomponent Solutions},
author = {Martyna Rzelewska-Piekut and Zuzanna Wolańczyk and Marek Nowicki and Magdalena Regel-Rosocka},
doi = {10.3390/molecules28135188},
year = {2023},
date = {2023-08-02},
urldate = {2023-08-02},
journal = {Molecules},
volume = {28},
issue = {13},
pages = {5188},
abstract = {This article presents studies on the precipitation of Pt, Pd, Rh, and Ru nanoparticles (NPs) from model and real multicomponent solutions using sodium borohydride, ascorbic acid, sodium formate, and formic acid as reducing agents and polyvinylpyrrolidone as a stabilizing agent. As was expected, apart from PGMs, non-precious metals were coprecipitated. The influence of the addition of non-precious metal ions into the feed solution on the precipitation yield and catalytic properties of the obtained precipitates was studied. A strong reducing agent, NaBH4 precipitates Pt, Pd, Rh, Fe and Cu NPs in most cases with an efficiency greater than 80% from three- and four-component model solutions. The morphology of the PGMs nanoparticles was analyzed via SEM-EDS and TEM. The size of a single nanoparticle of each precipitated metal was not larger than 5 nm. The catalytic properties of the obtained nanomaterials were confirmed via the reaction of the reduction of 4-nitrophenol (NPh) to 4-aminophenol (NAf). Nanocatalysts containing Pt/Pd/Fe NPs obtained from a real solution (produced as a result of the leaching of spent automotive catalysts) showed high catalytic activity (86% NPh conversion after 30 min of reaction at pH 11 with 3 mg of the nanocatalyst).},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
This article presents studies on the precipitation of Pt, Pd, Rh, and Ru nanoparticles (NPs) from model and real multicomponent solutions using sodium borohydride, ascorbic acid, sodium formate, and formic acid as reducing agents and polyvinylpyrrolidone as a stabilizing agent. As was expected, apart from PGMs, non-precious metals were coprecipitated. The influence of the addition of non-precious metal ions into the feed solution on the precipitation yield and catalytic properties of the obtained precipitates was studied. A strong reducing agent, NaBH4 precipitates Pt, Pd, Rh, Fe and Cu NPs in most cases with an efficiency greater than 80% from three- and four-component model solutions. The morphology of the PGMs nanoparticles was analyzed via SEM-EDS and TEM. The size of a single nanoparticle of each precipitated metal was not larger than 5 nm. The catalytic properties of the obtained nanomaterials were confirmed via the reaction of the reduction of 4-nitrophenol (NPh) to 4-aminophenol (NAf). Nanocatalysts containing Pt/Pd/Fe NPs obtained from a real solution (produced as a result of the leaching of spent automotive catalysts) showed high catalytic activity (86% NPh conversion after 30 min of reaction at pH 11 with 3 mg of the nanocatalyst).
41.
El-Ahmar, Semir; Jankowski, Jakub; Czaja, Paweł; Reddig, Wiktoria; Przychodnia, Marta; Raczyński, Jan; Koczorowski, Wojciech
Magnetic Field Sensor Operating From Cryogenics to Elevated Temperatures Journal Article
In: IEEE Sensors Letters, vol. 7, no. 8, pp. 2501904, 2023.
@article{El_Ahmar2023,
title = {Magnetic Field Sensor Operating From Cryogenics to Elevated Temperatures},
author = {Semir El-Ahmar and Jakub Jankowski and Paweł Czaja and Wiktoria Reddig and Marta Przychodnia and Jan Raczyński and Wojciech Koczorowski},
doi = {10.1109/LSENS.2023.3294525},
year = {2023},
date = {2023-07-31},
urldate = {2023-07-31},
journal = {IEEE Sensors Letters},
volume = {7},
number = {8},
pages = {2501904},
abstract = {Abstract—Magnetic field sensors, based on the Hall effect, in mass production currently have a standard operating temperature limit of 150 °C. There are sensors designed for specific purposes that can function within a limited range of up to 225 °C or even at the temperature of liquid nitrogen or liquid helium. The technology for the production of magnetic field sensors enabling operation in industrial conditions at temperatures significantly exceeding 225 °C or in the full range of temperatures from cryogenics to elevated temperatures (reaching 350 °C) has not yet been developed. In this letter, we present a reliable and high-quality magnetic field sensor that is capable of functioning under a wide range of temperatures. The sensor was developed using mainly the academic infrastructure of the Poznan University of Technology and can be suitable for industrial use.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Abstract—Magnetic field sensors, based on the Hall effect, in mass production currently have a standard operating temperature limit of 150 °C. There are sensors designed for specific purposes that can function within a limited range of up to 225 °C or even at the temperature of liquid nitrogen or liquid helium. The technology for the production of magnetic field sensors enabling operation in industrial conditions at temperatures significantly exceeding 225 °C or in the full range of temperatures from cryogenics to elevated temperatures (reaching 350 °C) has not yet been developed. In this letter, we present a reliable and high-quality magnetic field sensor that is capable of functioning under a wide range of temperatures. The sensor was developed using mainly the academic infrastructure of the Poznan University of Technology and can be suitable for industrial use.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the National Centre for Research and Development (Poland), Project “MAGSET” No. LIDER/8/0021/L- 11/19/NCBR/2020
42.
Januszewski, Rafał; Dutkiewicz, Michał; Nowicki, Marek; Kownacki, Ireneusz
Synthesis of novel bifunctional polyolefins and their application as hydrophobic agents for cotton fabrics Journal Article
In: Polymer Testing, vol. 126, pp. 108144, 2023.
@article{Januszewski2023,
title = {Synthesis of novel bifunctional polyolefins and their application as hydrophobic agents for cotton fabrics},
author = {Rafał Januszewski and Michał Dutkiewicz and Marek Nowicki and Ireneusz Kownacki},
doi = {10.1016/j.polymertesting.2023.108144},
year = {2023},
date = {2023-07-17},
urldate = {2023-07-31},
journal = {Polymer Testing},
volume = {126},
pages = {108144},
abstract = {Surface functionalization of cotton fabric was carried out using novel bifunctional polyolefins containing various pendant groups. The hydrophobization of the aforementioned natural material was successfully achieved and the durability of the coatings was proven by SEM-EDS and FT-IR techniques. Water contact angle (WCA) measurements revealed the effect of the functional group type on the properties of the treated surface. The presence of fluoroaryl groups in the polymer chain ensured the highest WCA value. The effect of the type of side groups (aryl vs alkyl, fluorinated vs halogen-free) in the polymer chain on the surface properties was also demonstrated. The modifiers applied did not affect the thermal stability of the treated cotton fabric compared to reference sample. Moreover, the flame-retardant properties of the polyolefin-coated cotton samples were also verified and discussed. This is the first report describing the application of organofunctionalized bifunctional polyolefins as surface modifiers for cotton fabrics.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Surface functionalization of cotton fabric was carried out using novel bifunctional polyolefins containing various pendant groups. The hydrophobization of the aforementioned natural material was successfully achieved and the durability of the coatings was proven by SEM-EDS and FT-IR techniques. Water contact angle (WCA) measurements revealed the effect of the functional group type on the properties of the treated surface. The presence of fluoroaryl groups in the polymer chain ensured the highest WCA value. The effect of the type of side groups (aryl vs alkyl, fluorinated vs halogen-free) in the polymer chain on the surface properties was also demonstrated. The modifiers applied did not affect the thermal stability of the treated cotton fabric compared to reference sample. Moreover, the flame-retardant properties of the polyolefin-coated cotton samples were also verified and discussed. This is the first report describing the application of organofunctionalized bifunctional polyolefins as surface modifiers for cotton fabrics.
43.
Raczyński, Jan; Nowak, Ewelina; Nowicki, Marek; El-Ahmar, Semir; Szybowicz, Mirosław; Koczorowski, Wojciech
Studies of temperature-dependent Raman spectra of thin PtSe2 layers on Al2O3 substrate Journal Article
In: Materials Science & Engineering B, vol. 297, pp. 116728, 2023.
@article{raczynski2023,
title = {Studies of temperature-dependent Raman spectra of thin PtSe2 layers on Al2O3 substrate},
author = {Jan Raczyński and Ewelina Nowak and Marek Nowicki and Semir El-Ahmar and Mirosław Szybowicz and Wojciech Koczorowski},
doi = {10.1016/j.mseb.2023.116728},
year = {2023},
date = {2023-07-13},
urldate = {2023-07-13},
journal = {Materials Science & Engineering B},
volume = {297},
pages = {116728},
abstract = {The results of temperature-dependent Raman spectroscopy studies of thin layers of PtSe2 (1–10 monolayers) deposited on an Al2O3 substrate are disscused in this paper. A redshift of the vibrational Raman modes (Eg and A1g) is observed when the thickness of PtSe2 and temperature increase. The results allow for determining the thickness of the PtSe2 layer deposited on the Al2O3 substrate by analysing the Raman shift of the PtSe2 modes (Eg and A1g) and the screening effects on the surface vibration mode (A1g). The other original result is the determination of the stresses and doping effects in PtSe2 for the considered range of layer thicknesses by analyses of the correlative plot. Finally, the thermal dependences of the Raman spectra are discussed regarding Raman shifts and intensity. The atomic force microscopy measurements show the presence of residual contamination with surface densities varying between samples.
Funding from the National Science Centre (Poland), Project Preludium bis No. 2019/35/O/ST5/01940
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2220},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The results of temperature-dependent Raman spectroscopy studies of thin layers of PtSe2 (1–10 monolayers) deposited on an Al2O3 substrate are disscused in this paper. A redshift of the vibrational Raman modes (Eg and A1g) is observed when the thickness of PtSe2 and temperature increase. The results allow for determining the thickness of the PtSe2 layer deposited on the Al2O3 substrate by analysing the Raman shift of the PtSe2 modes (Eg and A1g) and the screening effects on the surface vibration mode (A1g). The other original result is the determination of the stresses and doping effects in PtSe2 for the considered range of layer thicknesses by analyses of the correlative plot. Finally, the thermal dependences of the Raman spectra are discussed regarding Raman shifts and intensity. The atomic force microscopy measurements show the presence of residual contamination with surface densities varying between samples.
Funding from the National Science Centre (Poland), Project Preludium bis No. 2019/35/O/ST5/01940
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2220
Funding from the National Science Centre (Poland), Project Preludium bis No. 2019/35/O/ST5/01940
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2220
44.
Reddig, Wiktoria; Prokopowicz, Rafał; Ciuk, Tymoteusz; El-Ahmar, Semir
European Nuclear Young Generation Forum 2023, Krakow, May, 8-12, 2023, (Oral presentation ).
@conference{ENYGF2023,
title = {Graphene on SiC as a Potential Magnetic Field Detector Resilient to High Temperature and Neutron Radiation},
author = {Wiktoria Reddig and Rafał Prokopowicz and Tymoteusz Ciuk and Semir El-Ahmar},
url = {https://nano.put.poznan.pl/wp-content/uploads/2023/06/ENYGF2023_WR.pdf},
year = {2023},
date = {2023-05-08},
urldate = {2023-05-08},
booktitle = {European Nuclear Young Generation Forum 2023},
address = {Krakow, May, 8-12},
abstract = {Power industry is in need of rapid development of zero-emission technologies, as we face climate crisis. Nuclear reactors, aside from its power generation abilities, significantly contribute to development of other technologies, like nuclear fusion. The magnetic confinement fusion devices pose a challenge of precise magnetic field diagnostic that is required to contain electrically charged plasma. The challenge is to overcome extreme conditions, defined as strong neutron radiation and high temperatures up to 350°C. A new type of materials is sought that would be able to meet such difficult requirements. Therefore, we report on the first experimental study on the impact of neutron radiation on quasi free-standing (QFS) graphene, which was made possible thanks to MARIA research reactor that simulated those extreme conditions. For this purpose, we have fabricated hydrogen-intercalated QFS graphene on semiinsulating high-purity 4H-SiC(0001), passivated it with an Al2O3 layer, and exposed it to a fast-neutron fluence. Our findings suggest that the system may be a promising platform for magnetic diagnostics in magnetic-confinement fusion reactors.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320},
note = {Oral presentation
},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
Power industry is in need of rapid development of zero-emission technologies, as we face climate crisis. Nuclear reactors, aside from its power generation abilities, significantly contribute to development of other technologies, like nuclear fusion. The magnetic confinement fusion devices pose a challenge of precise magnetic field diagnostic that is required to contain electrically charged plasma. The challenge is to overcome extreme conditions, defined as strong neutron radiation and high temperatures up to 350°C. A new type of materials is sought that would be able to meet such difficult requirements. Therefore, we report on the first experimental study on the impact of neutron radiation on quasi free-standing (QFS) graphene, which was made possible thanks to MARIA research reactor that simulated those extreme conditions. For this purpose, we have fabricated hydrogen-intercalated QFS graphene on semiinsulating high-purity 4H-SiC(0001), passivated it with an Al2O3 layer, and exposed it to a fast-neutron fluence. Our findings suggest that the system may be a promising platform for magnetic diagnostics in magnetic-confinement fusion reactors.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2320
45.
Czaja, Paweł; El-Ahmar, Semir; Przychodnia, Marta; Koczorowski, Wojciech
Obudowa czujnika Halla do pracy w ekstremalnym zakresie temperatur Conference
XII Konferencja Techniki Próżni, Ryn, 19-21 kwietnia, 2023, (Prezentacja ustna).
@conference{Ryn2023PC,
title = {Obudowa czujnika Halla do pracy w ekstremalnym zakresie temperatur},
author = {Paweł Czaja and Semir El-Ahmar and Marta Przychodnia and Wojciech Koczorowski},
url = {https://nano.put.poznan.pl/wp-content/uploads/2023/06/Ryn2023_PC.pdf},
year = {2023},
date = {2023-04-19},
urldate = {2023-04-19},
booktitle = {XII Konferencja Techniki Próżni},
address = {Ryn, 19-21 kwietnia},
abstract = {Coraz bardziej wymagające warunki pracy maszyn m.in. w technologiach energe-tycznych czy kosmicznych przyczyniają się do zapotrzebowania na układy elektroniczne, a przede wszystkim na czujniki, które mogą sprostać trudnym warunkom jak bardzo wysokie temperatury (sięgające 350°C) lub temperatury kriogeniczne. Obecnie masowo produko-wane układy scalone wytrzymują temperatury do około 200°C) przez zastosowanie poli-merów do enkapsulacji elektroniki wewnątrz obudowy. Przedstawiamy czujnik pola ma-gnetycznego wykorzystujący efekt Halla zdolny wytrzymać ekstremalny zakres temperatur od -196°C do 350°C. W tym celu stworzyliśmy strukturę hallowską poprzez naparowanie na powierzchnie z i-GaAs warstwy czynnej z InSb metodą osadzania wybuchowego (ang. flash evaporation). Warstwa czynna została także pokryta warstwą ochronną z SiOx chro-niącą przed wpływem otoczenia na działanie czujnika. Ta struktura została umieszczona w obudowie typu CERDIP8, czyli ceramicznej odmianie obudowy DIP8 z ośmioma wyprowa-dzeniami i zamknięta ceramiczną osłoną. Z przeprowadzonych badań wpływu obudowy na pracę struktury wynika, że obudowa ma pomijalny wpływ na rejestrowane przez czujnik dane i jest w stanie wytrzymać założone ograniczenia temperaturowe.
Finansowanie z Narodowego Centrum Badań i Rozwoju, Projekt „MAGSET” Nr: LIDER/8/0021/L-11/19/NCBR/2020
Finansowanie z Ministerstwa Edukacji i Nauki, Projekt Nr: 0512/SBAD/2320},
note = {Prezentacja ustna},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
Coraz bardziej wymagające warunki pracy maszyn m.in. w technologiach energe-tycznych czy kosmicznych przyczyniają się do zapotrzebowania na układy elektroniczne, a przede wszystkim na czujniki, które mogą sprostać trudnym warunkom jak bardzo wysokie temperatury (sięgające 350°C) lub temperatury kriogeniczne. Obecnie masowo produko-wane układy scalone wytrzymują temperatury do około 200°C) przez zastosowanie poli-merów do enkapsulacji elektroniki wewnątrz obudowy. Przedstawiamy czujnik pola ma-gnetycznego wykorzystujący efekt Halla zdolny wytrzymać ekstremalny zakres temperatur od -196°C do 350°C. W tym celu stworzyliśmy strukturę hallowską poprzez naparowanie na powierzchnie z i-GaAs warstwy czynnej z InSb metodą osadzania wybuchowego (ang. flash evaporation). Warstwa czynna została także pokryta warstwą ochronną z SiOx chro-niącą przed wpływem otoczenia na działanie czujnika. Ta struktura została umieszczona w obudowie typu CERDIP8, czyli ceramicznej odmianie obudowy DIP8 z ośmioma wyprowa-dzeniami i zamknięta ceramiczną osłoną. Z przeprowadzonych badań wpływu obudowy na pracę struktury wynika, że obudowa ma pomijalny wpływ na rejestrowane przez czujnik dane i jest w stanie wytrzymać założone ograniczenia temperaturowe.
Finansowanie z Narodowego Centrum Badań i Rozwoju, Projekt „MAGSET” Nr: LIDER/8/0021/L-11/19/NCBR/2020
Finansowanie z Ministerstwa Edukacji i Nauki, Projekt Nr: 0512/SBAD/2320
Finansowanie z Narodowego Centrum Badań i Rozwoju, Projekt „MAGSET” Nr: LIDER/8/0021/L-11/19/NCBR/2020
Finansowanie z Ministerstwa Edukacji i Nauki, Projekt Nr: 0512/SBAD/2320
46.
Koczorowski, Wojciech; Raczyński, Jan; El-Ahmar, Semir; Nowak, Ewelina; Nowicki, Marek; Szybowicz, Mirosław; Czajka, Ryszard
Właściwości układów warstwowych zawierających PtSe2 Conference
XII Konferencja Techniki Próżni, Ryn, 19-21 kwietnia, 2023, (Prezentacja ustna).
@conference{Ryn2023JR,
title = {Właściwości układów warstwowych zawierających PtSe2},
author = {Wojciech Koczorowski and Jan Raczyński and Semir El-Ahmar and Ewelina Nowak and Marek Nowicki and Mirosław Szybowicz and Ryszard Czajka},
url = {https://nano.put.poznan.pl/wp-content/uploads/2023/06/Ryn2023_JR.pdf},
year = {2023},
date = {2023-04-19},
urldate = {2023-04-19},
booktitle = {XII Konferencja Techniki Próżni},
address = {Ryn, 19-21 kwietnia},
abstract = {Grafen stał się pierwszym materiałem warstwowym, powszechnie stosowanym materiałem warstwowym. Aktualnie grupa tych materiałów uległa znacznemu rozszerzeniu, a szczególne zainteresowanie naukowców budzą materiały z grupy dichalkogenków metali przejściowych (z ang. Transition Metal Dichalcogenides - TMD). W przeciwieostwie do grafenu materiały TMD pozsiadają możliwośd zmiany właściwości elektronowych, w tym przerwy energetycznej poprzez zmianę grubości (ilości monowarstw - ML) w układzie. Powoduje to, że stosując jeden rodzaj materiału uzyskiwad można warstwy o różnych właściwościach: metaliczne i półprzewodnikowe o różnych wartościach przerwy energetycznej . Z punktu widzenia zastosowao w urządzeniach elektronowych istotne są także inne parametry, np. ruchliwośd nośników ładunku elektrycznego. W finalnej konstrukcji urządzeo konieczne jest także rozwiązanie problemów technologicznych związanych z strukturyzacją urządzeo i wytwarzania kontaktów o niskiej rezystancji kontaktowej. Jednym z nowo zsyntetyzowanych materiałów typu TMD jest PtSe2. Materiał ten cechuje się ciekawymi właściwościami elektronowymi w tym stosunkowo wysoką teoretyczną wartością = 4038 cm2/(V·s) (1ML), a jego powierzchnia jest stabilna chemicznie. Odpornośd chemiczna z jednej strony pozwala na dużą stabilnośd czasową układów, z drugiej strony utrudnia tworzenie efektywnych kontaktów elektrycznych do warstwy.
W prezentacji przedstawione zostaną prace badawcze związane z procesowaniem cienkich warstw PtSe2 i obejmowad będą: wyniki charakteryzacji niemodyfikowanego kryształu oraz układów warstwowych PtSe2, wzrostu cienkich warstw metalicznych na powierzchni PtSe2 oraz propozycję procedury strukturyzacji urządzeo elektronowych o architekturze planarnej. W części pierwszej pokazane zostaną wyniki porównawcze właściwości fizycznych dla kryształu oraz komercyjnie dostępnych układów 1 – 10 ML PtSe2 osadzonych na podłożu Al2O3 z zastosowaniem technik spektroskopii ramanowskiej (z ang. Raman Spectroscopy) oraz mikroskopii sił atomowych (z ang. Atomic Force Microscope - AFM). W części drugiej omówione zostaną wstępne badania wzrostu cienkich warstw o grubościach 10 i 20 nm (Pd, Ti oraz Ni) wykonane technikami RS i skaningowej mikroskopii elektronowej (SEM). W ostatniej części przedstawiona zostanie także procedura wytworzenia urządzenia o architekturze planetarnej, podobnej do zastosowanej w przypadku warstw grafenu na podłożu Al2O3. W przypadku PtSe2 rozpylanie jonowe Ar+ zastąpiono trawieniem plazmą Ar. Stosując tę procedurę wytworzono strukturę pozwalająca na określenie rezystancji kontaktowej oraz oporności warstwy PtSe2o grubości 3 ML metodą TLM (z ang. The Transfer Length Method), stosując konfigurację elektrod 20 nm Ni/40 nm Au.
Finansowanie z Narodowego Centrum Nauki, Projekt Nr: 2019/35/O/ST5/01940
Finansowanie z Ministerstwa Edukacji i Nauki, Projekt Nr: 0512/SBAD/2320},
note = {Prezentacja ustna},
keywords = {},
pubstate = {published},
tppubtype = {conference}
}
Grafen stał się pierwszym materiałem warstwowym, powszechnie stosowanym materiałem warstwowym. Aktualnie grupa tych materiałów uległa znacznemu rozszerzeniu, a szczególne zainteresowanie naukowców budzą materiały z grupy dichalkogenków metali przejściowych (z ang. Transition Metal Dichalcogenides - TMD). W przeciwieostwie do grafenu materiały TMD pozsiadają możliwośd zmiany właściwości elektronowych, w tym przerwy energetycznej poprzez zmianę grubości (ilości monowarstw - ML) w układzie. Powoduje to, że stosując jeden rodzaj materiału uzyskiwad można warstwy o różnych właściwościach: metaliczne i półprzewodnikowe o różnych wartościach przerwy energetycznej . Z punktu widzenia zastosowao w urządzeniach elektronowych istotne są także inne parametry, np. ruchliwośd nośników ładunku elektrycznego. W finalnej konstrukcji urządzeo konieczne jest także rozwiązanie problemów technologicznych związanych z strukturyzacją urządzeo i wytwarzania kontaktów o niskiej rezystancji kontaktowej. Jednym z nowo zsyntetyzowanych materiałów typu TMD jest PtSe2. Materiał ten cechuje się ciekawymi właściwościami elektronowymi w tym stosunkowo wysoką teoretyczną wartością = 4038 cm2/(V·s) (1ML), a jego powierzchnia jest stabilna chemicznie. Odpornośd chemiczna z jednej strony pozwala na dużą stabilnośd czasową układów, z drugiej strony utrudnia tworzenie efektywnych kontaktów elektrycznych do warstwy.
W prezentacji przedstawione zostaną prace badawcze związane z procesowaniem cienkich warstw PtSe2 i obejmowad będą: wyniki charakteryzacji niemodyfikowanego kryształu oraz układów warstwowych PtSe2, wzrostu cienkich warstw metalicznych na powierzchni PtSe2 oraz propozycję procedury strukturyzacji urządzeo elektronowych o architekturze planarnej. W części pierwszej pokazane zostaną wyniki porównawcze właściwości fizycznych dla kryształu oraz komercyjnie dostępnych układów 1 – 10 ML PtSe2 osadzonych na podłożu Al2O3 z zastosowaniem technik spektroskopii ramanowskiej (z ang. Raman Spectroscopy) oraz mikroskopii sił atomowych (z ang. Atomic Force Microscope - AFM). W części drugiej omówione zostaną wstępne badania wzrostu cienkich warstw o grubościach 10 i 20 nm (Pd, Ti oraz Ni) wykonane technikami RS i skaningowej mikroskopii elektronowej (SEM). W ostatniej części przedstawiona zostanie także procedura wytworzenia urządzenia o architekturze planetarnej, podobnej do zastosowanej w przypadku warstw grafenu na podłożu Al2O3. W przypadku PtSe2 rozpylanie jonowe Ar+ zastąpiono trawieniem plazmą Ar. Stosując tę procedurę wytworzono strukturę pozwalająca na określenie rezystancji kontaktowej oraz oporności warstwy PtSe2o grubości 3 ML metodą TLM (z ang. The Transfer Length Method), stosując konfigurację elektrod 20 nm Ni/40 nm Au.
Finansowanie z Narodowego Centrum Nauki, Projekt Nr: 2019/35/O/ST5/01940
Finansowanie z Ministerstwa Edukacji i Nauki, Projekt Nr: 0512/SBAD/2320
W prezentacji przedstawione zostaną prace badawcze związane z procesowaniem cienkich warstw PtSe2 i obejmowad będą: wyniki charakteryzacji niemodyfikowanego kryształu oraz układów warstwowych PtSe2, wzrostu cienkich warstw metalicznych na powierzchni PtSe2 oraz propozycję procedury strukturyzacji urządzeo elektronowych o architekturze planarnej. W części pierwszej pokazane zostaną wyniki porównawcze właściwości fizycznych dla kryształu oraz komercyjnie dostępnych układów 1 – 10 ML PtSe2 osadzonych na podłożu Al2O3 z zastosowaniem technik spektroskopii ramanowskiej (z ang. Raman Spectroscopy) oraz mikroskopii sił atomowych (z ang. Atomic Force Microscope - AFM). W części drugiej omówione zostaną wstępne badania wzrostu cienkich warstw o grubościach 10 i 20 nm (Pd, Ti oraz Ni) wykonane technikami RS i skaningowej mikroskopii elektronowej (SEM). W ostatniej części przedstawiona zostanie także procedura wytworzenia urządzenia o architekturze planetarnej, podobnej do zastosowanej w przypadku warstw grafenu na podłożu Al2O3. W przypadku PtSe2 rozpylanie jonowe Ar+ zastąpiono trawieniem plazmą Ar. Stosując tę procedurę wytworzono strukturę pozwalająca na określenie rezystancji kontaktowej oraz oporności warstwy PtSe2o grubości 3 ML metodą TLM (z ang. The Transfer Length Method), stosując konfigurację elektrod 20 nm Ni/40 nm Au.
Finansowanie z Narodowego Centrum Nauki, Projekt Nr: 2019/35/O/ST5/01940
Finansowanie z Ministerstwa Edukacji i Nauki, Projekt Nr: 0512/SBAD/2320
47.
Zhezhera, Taras; Gluchowski, Paweł; Nowicki, Marek; Majchrowski, Andrzej; Kasprowicz, Dobrosława
Enhanced near-infrared emission of Er3+ as a synergistic effect of energy transfers in Bi3TeBO9:Yb3+/Er3+ phosphors Journal Article
In: Journal of Luminescence, vol. 258, pp. 119774, 2023, ISSN: 00222313.
@article{Zhezhera2023,
title = {Enhanced near-infrared emission of Er3+ as a synergistic effect of energy transfers in Bi3TeBO9:Yb3+/Er3+ phosphors},
author = {Taras Zhezhera and Paweł Gluchowski and Marek Nowicki and Andrzej Majchrowski and Dobrosława Kasprowicz},
doi = {10.1016/j.jlumin.2023.119774},
issn = {00222313},
year = {2023},
date = {2023-03-05},
urldate = {2023-03-05},
journal = {Journal of Luminescence},
volume = {258},
pages = {119774},
abstract = {Enhanced near-infrared emission at 1531 nm of Er3+ ions excited by Bi3+ and/or Yb3+ ions was revealed in Bi3TeBO9:Yb3+/Er3+ phosphors. The microcrystalline powders investigated: Bi3TeBO9:Er3+, Bi3TeBO9:Yb3+ and Bi3TeBO9:Yb3+/Er3+ were synthesized by means of the modified Pechini method. Their hexagonal structure with P63 space group was confirmed by XRD measurements. The morphology of the above-mentioned samples was analyzed using SEM technique. The results of μ-Raman investigations showed low phonon energy of Bi3TeBO9 matrix. The characteristic Er3+ emission at 1531 nm assigned to the 4I13/2 → 4I15/2 transition in Bi3TeBO9:Er3+ and Bi3TeBO9:Yb3+/Er3+ powders was excited by Bi3+ or Yb3+ ions (the 1S0 → 3P1 or 2F7/2 → 2F5/2 transitions) upon their excitation at 327 or 975 nm, respectively. It was revealed that the effective energy transfer from the excited Bi3+ ions (at 327 nm) directly to Er3+ ions or indirectly to Er3+ ions both via the excitation of Bi3+ ions in VIS range or excitation of Yb3+ ions in the NIR range results in synergistic effect, which produces enhanced emission at 1531 nm of Er3+ ions in Bi3TeBO9:Yb3+/Er3+ system. Moreover, it was found that the effective energy transfer from the excited Yb3+ ions (at 975 nm) directly to Er3+ ions results in the efficient emission at 1531 nm of Er3+ ions. Furthermore, the calculations of energy transfer efficiency and quantum efficiency proved the effective energy transfer from Bi3+ to Yb3+ and from Yb3+ to Er3+ ions. The corresponding mechanisms of energy transfer processes in the investigated materials were discussed on the basis of reflectance, excitation and emission spectra and measured decay times. The results indicate a potential of the use of Bi3TeBO9:Yb3+/Er3+ powders as spectral converters in new generation of photovoltaic devices.
Funding from the Ministry of Education and Science (Poland), Project No. 0511/SBAD/2251},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Enhanced near-infrared emission at 1531 nm of Er3+ ions excited by Bi3+ and/or Yb3+ ions was revealed in Bi3TeBO9:Yb3+/Er3+ phosphors. The microcrystalline powders investigated: Bi3TeBO9:Er3+, Bi3TeBO9:Yb3+ and Bi3TeBO9:Yb3+/Er3+ were synthesized by means of the modified Pechini method. Their hexagonal structure with P63 space group was confirmed by XRD measurements. The morphology of the above-mentioned samples was analyzed using SEM technique. The results of μ-Raman investigations showed low phonon energy of Bi3TeBO9 matrix. The characteristic Er3+ emission at 1531 nm assigned to the 4I13/2 → 4I15/2 transition in Bi3TeBO9:Er3+ and Bi3TeBO9:Yb3+/Er3+ powders was excited by Bi3+ or Yb3+ ions (the 1S0 → 3P1 or 2F7/2 → 2F5/2 transitions) upon their excitation at 327 or 975 nm, respectively. It was revealed that the effective energy transfer from the excited Bi3+ ions (at 327 nm) directly to Er3+ ions or indirectly to Er3+ ions both via the excitation of Bi3+ ions in VIS range or excitation of Yb3+ ions in the NIR range results in synergistic effect, which produces enhanced emission at 1531 nm of Er3+ ions in Bi3TeBO9:Yb3+/Er3+ system. Moreover, it was found that the effective energy transfer from the excited Yb3+ ions (at 975 nm) directly to Er3+ ions results in the efficient emission at 1531 nm of Er3+ ions. Furthermore, the calculations of energy transfer efficiency and quantum efficiency proved the effective energy transfer from Bi3+ to Yb3+ and from Yb3+ to Er3+ ions. The corresponding mechanisms of energy transfer processes in the investigated materials were discussed on the basis of reflectance, excitation and emission spectra and measured decay times. The results indicate a potential of the use of Bi3TeBO9:Yb3+/Er3+ powders as spectral converters in new generation of photovoltaic devices.
Funding from the Ministry of Education and Science (Poland), Project No. 0511/SBAD/2251
Funding from the Ministry of Education and Science (Poland), Project No. 0511/SBAD/2251
48.
Bazarnik, Maciej; Lo Conte, Roberto; Mascot, Eric; von Bergmann, Kirsten; Morr, Dirk K.; Wiesendanger, Roland
Antiferromagnetism-driven two-dimensional topological nodal-point superconductivity Journal Article
In: Nature Communications, vol. 14, iss. 1, no. 614, pp. 1-7, 2023.
@article{Bazarnik2023,
title = {Antiferromagnetism-driven two-dimensional topological nodal-point superconductivity},
author = {Maciej Bazarnik and Lo Conte, Roberto and Eric Mascot and Kirsten von Bergmann and Dirk K. Morr and Roland Wiesendanger },
doi = {10.1038/s41467-023-36201-z},
year = {2023},
date = {2023-02-04},
urldate = {2023-02-04},
journal = {Nature Communications},
volume = {14},
number = {614},
issue = {1},
pages = {1-7},
abstract = {Magnet/superconductor hybrids (MSHs) hold the promise to host emergent topological superconducting phases. Both one-dimensional (1D) and two-dimensional (2D) magnetic systems in proximity to s-wave superconductors have shown evidence of gapped topological superconductivity with zero-energy end states and chiral edge modes. Recently, it was proposed that the bulk transition-metal dichalcogenide 4Hb-TaS2 is a gapless topological nodal-point superconductor (TNPSC). However, there has been no experimental realization of a TNPSC in a MSH system yet. Here we present the discovery of TNPSC in antiferromagnetic (AFM) monolayers on top of an s-wave superconductor. Our calculations show that the topological phase is driven by the AFM order, resulting in the emergence of a gapless time-reversal invariant topological superconducting state. Using low-temperature scanning tunneling microscopy we observe a low-energy edge mode, which separates the topological phase from the trivial one, at the boundaries of antiferromagnetic islands. As predicted by the calculations, we find that the relative spectral weight of the edge mode depends on the edge’s atomic configuration. Our results establish the combination of antiferromagnetism and superconductivity as a novel route to design 2D topological quantum phases.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2220},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Magnet/superconductor hybrids (MSHs) hold the promise to host emergent topological superconducting phases. Both one-dimensional (1D) and two-dimensional (2D) magnetic systems in proximity to s-wave superconductors have shown evidence of gapped topological superconductivity with zero-energy end states and chiral edge modes. Recently, it was proposed that the bulk transition-metal dichalcogenide 4Hb-TaS2 is a gapless topological nodal-point superconductor (TNPSC). However, there has been no experimental realization of a TNPSC in a MSH system yet. Here we present the discovery of TNPSC in antiferromagnetic (AFM) monolayers on top of an s-wave superconductor. Our calculations show that the topological phase is driven by the AFM order, resulting in the emergence of a gapless time-reversal invariant topological superconducting state. Using low-temperature scanning tunneling microscopy we observe a low-energy edge mode, which separates the topological phase from the trivial one, at the boundaries of antiferromagnetic islands. As predicted by the calculations, we find that the relative spectral weight of the edge mode depends on the edge’s atomic configuration. Our results establish the combination of antiferromagnetism and superconductivity as a novel route to design 2D topological quantum phases.
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2220
Funding from the Ministry of Education and Science (Poland), Project No. 0512/SBAD/2220
2022
49.
El-Ahmar, Semir; Jankowski, Jakub
Czujnik pola magnetycznego o szerokim zakresie temperatur pracy Patent
2022, (Patent application P.443204).
@patent{P.443204_SA,
title = {Czujnik pola magnetycznego o szerokim zakresie temperatur pracy},
author = {Semir El-Ahmar and Jakub Jankowski},
year = {2022},
date = {2022-12-20},
note = {Patent application P.443204},
keywords = {},
pubstate = {published},
tppubtype = {patent}
}
50.
Duszczak, Julia; Mrzygłód, Aleksandra; Mituła, Katarzyna; Dutkiewicz, Michał; Januszewski, Rafał; Rzonsowska, Monika; Dudziec, Beata; Nowicki, Marek; Kubicki, Maciej
In: Inorganic Chemistry Frontiers, vol. 10, iss. 3, pp. 888-899, 2022.
@article{Duszczak2022,
title = {Distinct insight into the use of difunctional double-decker silsesquioxanes as building blocks for alternating A–B type macromolecular frameworks},
author = {Julia Duszczak and Aleksandra Mrzygłód and Katarzyna Mituła and Michał Dutkiewicz and Rafał Januszewski and Monika Rzonsowska and Beata Dudziec and Marek Nowicki and Maciej Kubicki},
doi = {10.1039/D2QI02161G},
year = {2022},
date = {2022-12-12},
urldate = {2022-12-12},
journal = {Inorganic Chemistry Frontiers},
volume = {10},
issue = {3},
pages = {888-899},
abstract = {Despite the rapid progress in the research on the synthesis of linear macromolecular systems with double-decker SQs included in the co-polymer chain, based on diverse catalytic processes, it still has limitations because of the formation of co-oligomers up to 20 units in a chain. Herein, we present a distinct look at known hydrosilylation reactions for forming hybrid copolymers. It is used as a synthetic protocol to synthesize DDSQ-based linear A–B alternating macromolecular systems and this is the first report on the formation of co-polymers with DDSQ with DPn over 1000. Additionally, this distinct insight concerns studies on the impact of Si–H and Si–Vi reactive group placement in DDSQ or in a respective co-reagent on the molecular weight distributions, degree of polymerization of the resulting copolymers as well as their selected physicochemical properties, i.e. thermal, mechanical, and hydrophobic properties. Understanding the basics of the catalytic processes leading to co-polymer SQ-based systems will pave the way for their use in the formation of hybrid materials of desired properties and respective applications},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Despite the rapid progress in the research on the synthesis of linear macromolecular systems with double-decker SQs included in the co-polymer chain, based on diverse catalytic processes, it still has limitations because of the formation of co-oligomers up to 20 units in a chain. Herein, we present a distinct look at known hydrosilylation reactions for forming hybrid copolymers. It is used as a synthetic protocol to synthesize DDSQ-based linear A–B alternating macromolecular systems and this is the first report on the formation of co-polymers with DDSQ with DPn over 1000. Additionally, this distinct insight concerns studies on the impact of Si–H and Si–Vi reactive group placement in DDSQ or in a respective co-reagent on the molecular weight distributions, degree of polymerization of the resulting copolymers as well as their selected physicochemical properties, i.e. thermal, mechanical, and hydrophobic properties. Understanding the basics of the catalytic processes leading to co-polymer SQ-based systems will pave the way for their use in the formation of hybrid materials of desired properties and respective applications
