Recently, one of the members of the DoSPaN team visited the Leibniz Institute IHP: Innovations for High Performance Microelectronics in Frankfurt (Oder). Regular internships at IHP-Frankfurt are almost a tradition in our group and seal our long-term scientific cooperation.

Our phd student went there to present his research results and get acquainted with the infrastructure of the Institute. The visit was also preparatory to a long-term stay planned for this year as part of a NAWA research grant focused on developing international cooperation.

As part of the joint project, together with IHP, we will carry out low-temperature measurements of a metallic layer on PtSe2 systems, using techniques such as X-ray photoelectron spectroscopy, Raman spectroscopy, atomic force microscopy or electrical characterization based on measurements of Hall effect.

We are looking forward to the first results!!